Park Jaegyu, Joo Jiho, Kwack Myung-Joon, Kim Gyungock, Han Sang-Pil, Kim Sungil
Opt Express. 2021 Oct 25;29(22):35261-35270. doi: 10.1364/OE.440260.
We fabricate three-dimensional wavelength-division multiplexing (3D-WDM) interconnects comprising three SiN layers using a CMOS-compatible process. In these interconnects, the optical signals are coupled directly to a SiN grating coupler in the middle SiN layer and demultiplexed by a 1 × 4 SiN array waveguide grating (AWG). The demultiplexed optical signals are interconnected from the middle SiN layer to the bottom and top SiN layers by four SiON interlayer couplers. A low insertion loss and low crosstalk are achieved in the AWG. The coupling losses of the SiON interlayer couplers and SiN grating coupler are ∼1.52 dB and ∼4.2 dB, respectively.
我们采用与CMOS兼容的工艺制造了包含三个氮化硅(SiN)层的三维波分复用(3D-WDM)互连结构。在这些互连结构中,光信号直接耦合到中间SiN层的SiN光栅耦合器,并由一个1×4 SiN阵列波导光栅(AWG)进行解复用。解复用后的光信号通过四个SiON层间耦合器从中间SiN层互连到底部和顶部SiN层。AWG实现了低插入损耗和低串扰。SiON层间耦合器和SiN光栅耦合器的耦合损耗分别约为1.52 dB和约4.2 dB。