Anagnost Kaitlin M, Lee Eldred, Wang Zhehui, Liu Jifeng, Fossum Eric R
Thayer School of Engineering at Dartmouth, Dartmouth College, Hanover, NH 03755, USA.
Los Alamos National Laboratory, Los Alamos, NM 87545, USA.
Sensors (Basel). 2021 Nov 14;21(22):7566. doi: 10.3390/s21227566.
Simulation results are presented that explore an innovative, new design for X-ray detection in the 20-50 keV range that is an alternative to traditional direct and indirect detection methods. Typical indirect detection using a scintillator must trade-off between absorption efficiency and spatial resolution. With a high-Z layer that down-converts incident photons on top of a silicon detector, this design has increased absorption efficiency without sacrificing spatial resolution. Simulation results elucidate the relationship between the thickness of each layer and the number of photoelectrons generated. Further, the physics behind the production of electron-hole pairs in the silicon layer is studied via a second model to shed more light on the detector's functionality. Together, the two models provide a greater understanding of this detector and reveal the potential of this novel form of X-ray detection.
本文展示了模拟结果，该结果探索了一种用于20-50keV范围内X射线检测的创新型新设计，此设计可替代传统的直接和间接检测方法。使用闪烁体的典型间接检测必须在吸收效率和空间分辨率之间进行权衡。通过在硅探测器顶部设置一个可将入射光子进行下转换的高Z层，这种设计在不牺牲空间分辨率的情况下提高了吸收效率。模拟结果阐明了每层厚度与产生的光电子数量之间的关系。此外，通过第二个模型研究了硅层中电子-空穴对产生背后的物理过程，以更深入地了解探测器的功能。这两个模型共同提供了对该探测器更深入的理解，并揭示了这种新型X射线检测形式的潜力。
