具有纯铝阳极的顶发射有机发光二极管的增强空穴注入特性

Enhanced Hole Injection Characteristics of a Top Emission Organic Light-Emitting Diode with Pure Aluminum Anode.

作者信息

Park Chan Young, Choi Byoungdeog

机构信息

Department of Electrical and Computer Engineering, Sungkyunkwan University, 2066 Seobu-Ro, Jangan-Gu, Suwon 16419, Korea.

出版信息

Nanomaterials (Basel). 2021 Oct 27;11(11):2869. doi: 10.3390/nano11112869.

DOI:10.3390/nano11112869

PMID:34835634

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8625966/

Abstract

A top emitting organic light-emitting diode (OLED) device with pure aluminum (Al) anode for high-resolution microdisplays was proposed and fabricated. The low work function of the Al anode, even with a native oxide formed on the Al anode surface, increases the energy barrier of the interface between the anode and hole injection layer, and has poor hole-injection properties, which causes the low efficiency of the device. To enhance the hole-injection characteristics of the Al anode, we applied hexaazatriphenylene hexacarbonitrile (HATCN) as the hole-injection layer material. The proposed OLED device with a pure Al anode and native oxide on the anode surface improved efficiency by up to 35 cd/A at 1000 nit, which is 78% of the level of normal OLEDs with indium tin oxide (ITO) anode.

摘要

提出并制造了一种用于高分辨率微显示器的具有纯铝（Al）阳极的顶部发射有机发光二极管（OLED）器件。Al阳极的低功函数，即使在其表面形成了天然氧化物，也会增加阳极与空穴注入层之间界面的能垒，并且具有较差的空穴注入特性，这导致器件效率较低。为了增强Al阳极的空穴注入特性，我们应用六氮杂三亚苯六腈（HATCN）作为空穴注入层材料。所提出的具有纯Al阳极且阳极表面有天然氧化物的OLED器件在1000尼特时效率提高了35坎德拉/安培，这是具有氧化铟锡（ITO）阳极的普通OLED水平的78%。