Nugroho Andika Pandu, Hawari Naufal Hanif, Prakoso Bagas, Refino Andam Deatama, Yulianto Nursidik, Iskandar Ferry, Kartini Evvy, Peiner Erwin, Wasisto Hutomo Suryo, Sumboja Afriyanti
Material Science and Engineering Research Group, Faculty of Mechanical and Aerospace, Institut Teknologi Bandung, Jl. Ganesha 10, Bandung 40132, Indonesia.
National Battery Research Institute, Gedung EduCenter Lt. 2 Unit 22260 BSD City, South Tangerang 15331, Indonesia.
Nanomaterials (Basel). 2021 Nov 20;11(11):3137. doi: 10.3390/nano11113137.
Due to its high theoretical specific capacity, a silicon anode is one of the candidates for realizing high energy density lithium-ion batteries (LIBs). However, problems related to bulk silicon (e.g., low intrinsic conductivity and massive volume expansion) limit the performance of silicon anodes. In this work, to improve the performance of silicon anodes, a vertically aligned -type silicon nanowire array (-SiNW) was fabricated using a well-controlled, top-down nano-machining technique by combining photolithography and inductively coupled plasma reactive ion etching (ICP-RIE) at a cryogenic temperature. The array of nanowires ~1 µm in diameter and with the aspect ratio of ~10 was successfully prepared from commercial -type silicon wafer. The half-cell LIB with free-standing -SiNW electrode exhibited an initial Coulombic efficiency of 91.1%, which was higher than the battery with a blank -silicon wafer electrode (i.e., 67.5%). Upon 100 cycles of stability testing at 0.06 mA cm, the battery with the -SiNW electrode retained 85.9% of its 0.50 mAh cm capacity after the pre-lithiation step, whereas its counterpart, the blank -silicon wafer electrode, only maintained 61.4% of 0.21 mAh cm capacity. Furthermore, 76.7% capacity retention can be obtained at a current density of 0.2 mA cm, showing the potential of -SiNW anodes for high current density applications. This work presents an alternative method for facile, high precision, and high throughput patterning on a wafer-scale to obtain a high aspect ratio -SiNW, and its application in LIBs.
由于其较高的理论比容量，硅阳极是实现高能量密度锂离子电池（LIBs）的候选材料之一。然而，与块状硅相关的问题（例如，低本征电导率和大量体积膨胀）限制了硅阳极的性能。在这项工作中，为了提高硅阳极的性能，通过在低温下结合光刻和电感耦合等离子体反应离子蚀刻（ICP-RIE），采用一种可控的自上而下的纳米加工技术制备了垂直排列的 - 型硅纳米线阵列（-SiNW）。由商用 - 型硅片成功制备出了直径约1 µm且长径比约为10的纳米线阵列。具有自支撑 -SiNW 电极的半电池 LIB 表现出 91.1% 的初始库仑效率，高于使用空白 - 硅片电极的电池（即 67.5%）。在 0.06 mA cm 的电流密度下进行 100 次循环稳定性测试后，具有 -SiNW 电极的电池在预锂化步骤后保留了其 0.50 mAh cm 容量的 85.9%，而其对应的空白 - 硅片电极仅保持了 0.21 mAh cm 容量的 61.4%。此外，在 0.2 mA cm 的电流密度下可获得 76.7% 的容量保持率，表明 -SiNW 阳极在高电流密度应用中的潜力。这项工作提出了一种在晶圆级进行简便、高精度和高通量图案化以获得高长径比 -SiNW 的替代方法及其在 LIBs 中的应用。
