Zhang Huiyin, Li Yiming, Tan Shan, Chen Zijing, Song Keke, Huang Shixian, Shi Jiangjian, Luo Yanhong, Li Dongmei, Meng Qingbo
School of Instrument Science and Opto Electronic Engineering, Beijing Information Science & Technology University, Beijing 100192, PR China.
Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.
J Colloid Interface Sci. 2022 Feb 15;608(Pt 3):3151-3158. doi: 10.1016/j.jcis.2021.11.050. Epub 2021 Nov 13.
Carbon-based perovskite solar cells (C-PSCs) have attracted widespread research interest because of their excellent stability. However, the power conversion efficiency (PCE) of C-PSCs, especially planar C-PSCs, lags far behind the certified efficiency (25.5%) of metal-based PSCs. The simple architecture of planar C-PSCs imparts stringent requirements for device configuration. In this study, we fabricated high-performance planar C-PSCs through device configuration engineering in terms of the perovskite active layer and carbon electrode. Through the combination of component and additive engineering, the crystallization and absorption profiles of perovskite active layer have been improved, which afforded sufficient photogenerated carriers and decreased nonradiative recombination. Furthermore, the mechanical and physical properties of carbon electrode were evaluated comprehensively to regulate the back-interface contact. Based on the compromise of the flexibility and conductivity of carbon film, an excellent back-interface contact has been formed, which promoted fast interface charge transfer, thereby decreasing interface recombination and improving carrier collection efficiency. Finally, the as-prepared devices achieved a remarkable PCE of up to 20.04%, which is a record-high value for planar C-PSCs. Furthermore, the as-prepared devices exhibited excellent long-term stability. After storage for 1000 h at room temperature and 25% relative humidity without encapsulation, the as-prepared device retained 94% of its initial performance.
碳基钙钛矿太阳能电池（C-PSCs）因其出色的稳定性而引起了广泛的研究兴趣。然而，C-PSCs的功率转换效率（PCE），尤其是平面C-PSCs的功率转换效率，远远落后于金属基PSCs的认证效率（25.5%）。平面C-PSCs的简单结构对器件配置提出了严格的要求。在本研究中，我们通过在钙钛矿活性层和碳电极方面进行器件配置工程，制备了高性能的平面C-PSCs。通过成分和添加剂工程的结合，改善了钙钛矿活性层的结晶和吸收特性，从而提供了足够的光生载流子并减少了非辐射复合。此外，还对碳电极的机械和物理性能进行了全面评估，以调节背界面接触。基于碳膜柔韧性和导电性的折衷，形成了优异的背界面接触，促进了界面电荷的快速转移，从而减少了界面复合并提高了载流子收集效率。最终，所制备的器件实现了高达20.04%的显著PCE，这是平面C-PSCs的创纪录高值。此外，所制备的器件表现出优异的长期稳定性。在室温及25%相对湿度下未封装储存1000小时后，所制备的器件保留了其初始性能的94%。
