Gutiérrez Yael, Giangregorio Maria M, Dicorato Stefano, Palumbo Fabio, Losurdo Maria
Institute of Nanotechnology, CNR-NANOTEC, c/o Dipartimento di Chimica, Università di Bari, Bari, Italy.
Front Chem. 2021 Nov 19;9:781467. doi: 10.3389/fchem.2021.781467. eCollection 2021.
Group III layered monochalcogenide gallium sulfide, GaS, is one of the latest additions to the two-dimensional (2D) materials family, and of particular interest for visible-UV optoelectronic applications due to its wide bandgap energy in the range 2.35-3.05 eV going from bulk to monolayer. Interestingly, when going to the few-layer regime, changes in the electronic structure occur, resulting in a change in the properties of the material. Therefore, a systematic study on the thickness dependence of the different properties of GaS is needed. Here, we analyze mechanically exfoliated GaS layers transferred to glass substrates. Specifically, we report the dependence of the Raman spectra, photoluminescence, optical transmittance, resistivity, and work function on the thickness of GaS. Those findings can be used as guidance in designing devices based on GaS.
第三组层状单硫化物硫化镓（GaS）是二维（2D）材料家族中的最新成员之一，由于其从体材料到单层的带隙能量在2.35 - 3.05电子伏特范围内，因此在可见 - 紫外光电子应用中特别受关注。有趣的是，当进入少层状态时，电子结构会发生变化，从而导致材料性质的改变。因此，需要对GaS不同性质的厚度依赖性进行系统研究。在这里，我们分析了转移到玻璃衬底上的机械剥离GaS层。具体而言，我们报告了拉曼光谱、光致发光、光学透过率、电阻率和功函数对GaS厚度的依赖性。这些发现可作为设计基于GaS的器件的指导。
