衬底诱导的局部应变导致单层 MoS 中的间接能隙水坑。
Indirect Bandgap Puddles in Monolayer MoS by Substrate-Induced Local Strain.
机构信息
Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, 16419, South Korea.
Sungkyunkwan University, Suwon, 16419, South Korea.
出版信息
Adv Mater. 2016 Nov;28(42):9378-9384. doi: 10.1002/adma.201602626. Epub 2016 Sep 7.
An unusually large bandgap modulation of 1.23-2.65 eV in monolayer MoS on a SiO /Si substrate is found due to the inherent local bending strain induced by the surface roughness of the substrate, reaching the direct-to-indirect bandgap transition. Approximately 80% of the surface area reveals an indirect bandgap, which is confirmed further by the degraded photoluminescence compared to that from suspended MoS .
由于衬底表面粗糙度引起的固有局部弯曲应变，在 SiO2/Si 衬底上的单层 MoS2 中发现了异常大的 1.23-2.65 eV 的能隙调制，达到了直接-间接带隙跃迁。大约 80%的表面积呈现出间接带隙，这一点通过与悬浮 MoS2 的光致发光相比进一步得到证实。
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