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掺杂单层MoSe₂中的负谷极化

Negative valley polarization in doped monolayer MoSe.

作者信息

Wu Yueh-Chun, Taniguchi Takashi, Watanabe Kenji, Yan Jun

机构信息

Department of Physics, University of Massachusetts Amherst, Amherst, Massachusetts 01003, USA.

International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan.

出版信息

Phys Chem Chem Phys. 2021 Dec 22;24(1):191-196. doi: 10.1039/d1cp03490a.

Abstract

Monolayer molybdenum di-selenide (1L-MoSe) stands out in the transition metal dichalcogenide family of materials as an outlier where optical generation of valley polarization is inefficient. Here we show that using charge doping in conjunction with an external magnetic field, the valley polarization of 1L-MoSe can be controlled effectively. Most remarkably, the valley polarization can be tuned to negative values, where the higher energy Zeeman mode emission is more intense than the lower energy one. Our experimental observations are interpreted with valley-selective exciton-charge dressing that manifests when gate induced doping populates predominantly one valley in the presence of Zeeman splitting.

摘要

单层二硒化钼(1L-MoSe)在过渡金属二硫族化合物材料家族中是个异类,其谷极化的光生效率很低。在此我们表明,通过结合电荷掺杂与外部磁场,可以有效控制1L-MoSe的谷极化。最显著的是,谷极化可以被调节为负值,此时较高能量的塞曼模式发射比低能量的更强烈。我们的实验观察结果通过谷选择性激子-电荷修饰来解释,当栅极诱导掺杂在存在塞曼分裂的情况下主要填充一个谷时,这种修饰就会表现出来。

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