Li Yilei, Ludwig Jonathan, Low Tony, Chernikov Alexey, Cui Xu, Arefe Ghidewon, Kim Young Duck, van der Zande Arend M, Rigosi Albert, Hill Heather M, Kim Suk Hyun, Hone James, Li Zhiqiang, Smirnov Dmitry, Heinz Tony F
Departments of Physics and Electrical Engineering, Columbia University, New York, New York 10027, USA.
National High Magnetic Field Laboratory, Tallahassee, Florida 32312, USA.
Phys Rev Lett. 2014 Dec 31;113(26):266804. doi: 10.1103/PhysRevLett.113.266804. Epub 2014 Dec 23.
We have measured circularly polarized photoluminescence in monolayer MoSe2 under perpendicular magnetic fields up to 10 T. At low doping densities, the neutral and charged excitons shift linearly with field strength at a rate of ∓0.12 meV/T for emission arising, respectively, from the K and K' valleys. The opposite sign for emission from different valleys demonstrates lifting of the valley degeneracy. The magnitude of the Zeeman shift agrees with predicted magnetic moments for carriers in the conduction and valence bands. The relative intensity of neutral and charged exciton emission is modified by the magnetic field, reflecting the creation of field-induced valley polarization. At high doping levels, the Zeeman shift of the charged exciton increases to ∓0.18 meV/T. This enhancement is attributed to many-body effects on the binding energy of the charged excitons.
我们测量了单层MoSe₂在高达10 T的垂直磁场下的圆偏振光致发光。在低掺杂密度下,中性和带电激子随场强线性移动,对于分别来自K和K'谷的发射,移动速率为∓0.12 meV/T。不同谷发射的相反符号表明谷简并性的解除。塞曼位移的大小与导带和价带中载流子的预测磁矩一致。中性和带电激子发射的相对强度被磁场改变,反映了场诱导谷极化的产生。在高掺杂水平下,带电激子的塞曼位移增加到∓0.18 meV/T。这种增强归因于对带电激子结合能的多体效应。