Université Paris-Saclay, CNRS, Laboratoire de Physique des Solides, 91405 Orsay, France.
Université Paris-Saclay, CNRS, Institut des Sciences Moléculaires d'Orsay, Orsay, France.
Science. 2021 Dec 10;374(6573):1399-1402. doi: 10.1126/science.abf9396. Epub 2021 Dec 9.
The electronic properties of graphene have been intensively investigated over the past decade. However, the singular orbital magnetism of undoped graphene, a fundamental signature of the characteristic Berry phase of graphene’s electronic wave functions, has been challenging to measure in a single flake. Using a highly sensitive giant magnetoresistance (GMR) sensor, we have measured the gate voltage–dependent magnetization of a single graphene monolayer encapsulated between boron nitride crystals. The signal exhibits a diamagnetic peak at the Dirac point whose magnetic field and temperature dependences agree with long-standing theoretical predictions. Our measurements offer a means to monitor Berry phase singularities and explore correlated states generated by the combined effects of Coulomb interactions, strain, or moiré potentials.
在过去的十年中,人们对石墨烯的电子特性进行了深入研究。然而,在单个薄片中测量未掺杂石墨烯的奇异轨道磁矩一直具有挑战性,这是石墨烯电子波函数特征 Berry 相位的基本特征。我们使用高灵敏度的巨磁电阻(GMR)传感器,测量了封装在氮化硼晶体之间的单个石墨烯单层的栅极电压相关磁化。该信号在 Dirac 点处表现出抗磁性峰值,其磁场和温度依赖性与长期以来的理论预测一致。我们的测量提供了一种监测 Berry 相位奇点的方法,并探索了由库仑相互作用、应变或莫尔势的综合效应产生的相关状态。