Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel.
Departments of Physics and Electrical Engineering, University of Colorado Denver, Denver, CO, USA.
Nature. 2023 Dec;624(7991):275-281. doi: 10.1038/s41586-023-06763-5. Epub 2023 Nov 22.
The exceptional control of the electronic energy bands in atomically thin quantum materials has led to the discovery of several emergent phenomena. However, at present there is no versatile method for mapping the local band structure in advanced two-dimensional materials devices in which the active layer is commonly embedded in the insulating layers and metallic gates. Using a scanning superconducting quantum interference device, here we image the de Haas-van Alphen quantum oscillations in a model system, the Bernal-stacked trilayer graphene with dual gates, which shows several highly tunable bands. By resolving thermodynamic quantum oscillations spanning more than 100 Landau levels in low magnetic fields, we reconstruct the band structure and its evolution with the displacement field with excellent precision and nanoscale spatial resolution. Moreover, by developing Landau-level interferometry, we show shear-strain-induced pseudomagnetic fields and map their spatial dependence. In contrast to artificially induced large strain, which leads to pseudomagnetic fields of hundreds of tesla, we detect naturally occurring pseudomagnetic fields as low as 1 mT corresponding to graphene twisting by 1 millidegree, two orders of magnitude lower than the typical angle disorder in twisted bilayer graphene. This ability to resolve the local band structure and strain at the nanoscale level enables the characterization and use of tunable band engineering in practical van der Waals devices.
原子层薄的量子材料中电子能带的非凡控制导致了多种新现象的发现。然而,目前还没有一种通用的方法可以在先进的二维材料器件中绘制局部能带结构,而这些器件中的有源层通常嵌入在绝缘层和金属栅极中。我们使用扫描超导量子干涉仪,对模型系统——双栅堆叠的伯纳尔堆叠三层石墨烯中的德哈斯-范阿尔芬量子振荡进行了成像,该系统显示了几个高度可调谐的能带。通过在低磁场中解析跨越超过 100 个朗道能级的热力学量子振荡,我们以优异的精度和纳米级空间分辨率重建了能带结构及其随位移场的演化。此外,通过开发朗道能级干涉测量法,我们展示了剪切应变诱导的赝磁场,并绘制了它们的空间依赖性。与人为诱导的高达数百特斯拉的大应变产生的赝磁场相比,我们检测到的自然赝磁场低至 1 毫特斯拉,对应于石墨烯扭转 1 毫度,比扭曲双层石墨烯中典型的角度无序低两个数量级。这种在纳米尺度上分辨局部能带结构和应变的能力,使我们能够在实际的范德瓦尔斯器件中对可调谐能带工程进行表征和利用。