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缺陷对NiO/SnO异质结构的光学、电子和界面性质的影响:双功能太阳能光催化产氢及RhB降解

Effect of Defects on Optical, Electronic, and Interface Properties of NiO/SnO Heterostructures: Dual-Functional Solar Photocatalytic H Production and RhB Degradation.

作者信息

Maarisetty Dileep, Baral Saroj Sundar

机构信息

Department of Chemical Engineering, BITS Pilani, K K Birla Goa Campus, Goa 403726, India.

Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai 400076, Maharastra, India.

出版信息

ACS Appl Mater Interfaces. 2021 Dec 22;13(50):60002-60017. doi: 10.1021/acsami.1c19544. Epub 2021 Dec 12.

Abstract

Photocatalytic H evolution and organic pollutant oxidation have witnessed a radical surge in recent times. However, this integration demands spatial charge separation and unique interface properties for a trade-off between oxidation and reduction reactions. In the current work, defect engineering of NiO/SnO nanoparticles aided in altering the optoelectronics and interface properties and enhanced photocatalytic activity. After annealing the catalysts in a N atmosphere, the hydroxyl groups were replaced by water molecules through surface modification. The photoexcited holes accumulated on SnO break the water molecules and facilitate the reduction of protons on NiO; this is known as spatial separation. Meanwhile, direct hole oxidation, an oxygen reduction reaction, ensures the degradation activity in this 2-fold system. By defect engineering, the limitations of SnO such as higher HO adsorption, wide bandgap (reduced from 3.02 to 1.88 eV), and electronic properties were addressed. The H production in the current work has attained a value of 3732 μmol/(g h), which is 2.9 times that of the previous best reported under sunlight. Recyclability tests confirmed the stability of vacancies by promoting the reoxidation of defect states during photocatalytic activity. Additionally, efforts were made to study the effect of defect density on the photocurrent, the electrical resistance, and the mechanism of photocatalytic reactions. Electrochemical characterizations, UPS, XPS, UV-DRS, and PL were employed to understand the influence of defects on the bandgap, charge recombination, charge transport, charge carrier lifetime, and the interface properties that are responsible for photocatalytic activity. In this regard, it was understood that maintaining the optimal defect concentration is important for higher photocatalytic efficiencies, as the defect optimality preserves key photocatalytic properties. Apart from characterizations, the photocatalytic results suggest that excess defect density triggers the undesired thermodynamically favored back reactions, which greatly hampered the H yield of the process.

摘要

近年来,光催化析氢和有机污染物氧化取得了显著进展。然而,这种整合需要空间电荷分离和独特的界面性质,以实现氧化和还原反应之间的平衡。在当前的工作中,对NiO/SnO纳米颗粒进行缺陷工程有助于改变其光电和界面性质,并提高光催化活性。在氮气气氛中对催化剂进行退火后,通过表面改性,羟基被水分子取代。光激发产生的空穴在SnO上积累,分解水分子,并促进NiO上质子的还原;这被称为空间分离。同时,直接空穴氧化,即氧还原反应,确保了该二元体系中的降解活性。通过缺陷工程,解决了SnO的一些局限性,如较高的羟基吸附、宽带隙(从3.02 eV降至1.88 eV)以及电子性质等问题。当前工作中的析氢量达到了3732 μmol/(g·h),是此前在阳光下报道的最佳值的2.9倍。可回收性测试通过在光催化活性过程中促进缺陷态的再氧化,证实了空位的稳定性。此外,还努力研究了缺陷密度对光电流、电阻以及光催化反应机理的影响。采用电化学表征、紫外光电子能谱(UPS)、X射线光电子能谱(XPS)、紫外可见漫反射光谱(UV-DRS)和光致发光光谱(PL)来理解缺陷对带隙、电荷复合、电荷传输、电荷载流子寿命以及负责光催化活性的界面性质的影响。在这方面,可以理解的是,保持最佳缺陷浓度对于提高光催化效率很重要,因为缺陷的最优性保留了关键的光催化性能。除了表征之外,光催化结果表明,过量的缺陷密度会引发不期望的热力学上有利的逆反应,这极大地阻碍了该过程中的析氢产率。

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