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用于自旋电子器件的PtRu/[CoNi]/Ru多层膜中的增强自旋轨道转矩和低临界电流密度

Enhanced Spin-Orbit Torque and Low Critical Current Density in PtRu/[CoNi]/Ru Multilayer for Spintronic Devices.

作者信息

Ju Hongzhan, Zhao Xiaotian, Liu Wei, Song Yuhang, Liu Long, Ma Jun, Li Yang, Wu Jinxiang, Zhang Zhidong

机构信息

Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China.

School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China.

出版信息

ACS Appl Mater Interfaces. 2021 Dec 29;13(51):61742-61750. doi: 10.1021/acsami.1c17653. Epub 2021 Dec 14.

Abstract

Using a heavy-metal (HM) alloy layer in spin-orbit torque (SOT)-based devices is an effective method for obtaining a high current-spin conversion efficiency θ. In this work, SOT-based spintronic devices with a PtRu-alloyed HM layer are studied by applying harmonic Hall measurements and magneto-optical Kerr effect microscopy to detect the θ and to observe the process of current-induced magnetization switching. Both the highest θ of 0.132 and the lowest critical current density () of 8 × 10 A/cm are realized in a device with = 20, which satisfies the high SOT efficiency and low energy consumption simultaneously. The interfacial Dzyaloshinskii-Moriya interaction can be overcome by increasing the in-plane assist field. Meanwhile, the minimum in-plane field required for current-induced complete switching can be reduced to ±60 Oe. Our study reveals that using the Pt-Ru alloyed HM layer is an effective route for SOT application with enhanced performance.

摘要

在基于自旋轨道矩(SOT)的器件中使用重金属(HM)合金层是获得高电流-自旋转换效率θ的有效方法。在这项工作中,通过应用谐波霍尔测量和磁光克尔效应显微镜来检测θ并观察电流诱导的磁化翻转过程,对具有PtRu合金化HM层的基于SOT的自旋电子器件进行了研究。在具有特定条件(这里条件表述似乎有误,推测应为某个参数值为20 )的器件中,实现了高达0.132的最高θ和低至8×10 A/cm的最低临界电流密度,这同时满足了高SOT效率和低能耗。通过增加面内辅助场可以克服界面Dzyaloshinskii-Moriya相互作用。同时,电流诱导完全翻转所需的最小面内场可降至±60 Oe。我们的研究表明,使用Pt-Ru合金化HM层是实现性能增强的SOT应用的有效途径。

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