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金属多层膜诱导的无外场自旋轨道转矩垂直磁化翻转

Field-free Spin-Orbit Torque Perpendicular Magnetization Switching Induced by Metallic Multilayers.

作者信息

Liu Jiaqiang, Zha Xi, Lu Qi, Liang Liwen, Wang Wenli, Hu Zhongqiang, Guo Zhixin, Wang Zhiguang, Liu Ming

机构信息

State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Engineering Research Center of Spin Quantum Sensor Chips, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China.

Center for Spintronics and Quantum System, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China.

出版信息

ACS Appl Mater Interfaces. 2024 Sep 18;16(37):49966-49972. doi: 10.1021/acsami.4c10495. Epub 2024 Sep 5.

Abstract

The realization of the all-electrical manipulation of perpendicular magnetization switching is essential for next-generation information storage technologies and spintronic devices. Current-induced spin-orbit torque (SOT) has attracted tremendous research interest. However, this approach usually relies on external magnetic field to achieve deterministic switching, which greatly limits SOT devices moving toward practical applications. Here, we report the measurement of SOT from the [Pt/Au] multilayer with composition gradient along the thickness direction. The multilayer exhibits a much larger SOT efficiency than pure Pt, and current-induced field-free magnetization switching has been realized in Co/[Pt/Au] heterostructures. Anomalous Hall resistance loop shift measurements indicate that the [Pt/Au] multilayer can produce spin current with -direction polarization. Moreover, the results of the control experiments show that the Pt/Au interface is the primary cause of the -direction polarized spin current for triggering field-free switching, whereas the compositional gradient effect is peripheral. We speculate that the field-free switching originates from the synergetic interface effect and Dzyaloshinskii-Moriya interaction. Our work not only paves the way for SOT devices toward practical application but also provides novel insights into the mechanisms governing current-induced deterministic perpendicular magnetization switching.

摘要

实现垂直磁化翻转的全电学操控对于下一代信息存储技术和自旋电子器件至关重要。电流诱导自旋轨道矩(SOT)已引起了巨大的研究兴趣。然而,这种方法通常依赖外部磁场来实现确定性翻转,这极大地限制了SOT器件走向实际应用。在此,我们报道了对沿厚度方向具有成分梯度的[Pt/Au]多层膜的SOT测量。该多层膜展现出比纯Pt大得多的SOT效率,并且在Co/[Pt/Au]异质结构中实现了电流诱导的无磁场磁化翻转。反常霍尔电阻回线偏移测量表明,[Pt/Au]多层膜能够产生具有 - 方向极化的自旋电流。此外,控制实验结果表明,Pt/Au界面是触发无磁场翻转的 - 方向极化自旋电流的主要原因,而成分梯度效应是次要的。我们推测无磁场翻转源于协同界面效应和Dzyaloshinskii - Moriya相互作用。我们的工作不仅为SOT器件走向实际应用铺平了道路,还为电流诱导确定性垂直磁化翻转的机制提供了新的见解。

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