Li Qi, Dong Junchen, Han Dedong, Wang Yi
Institute of Microelectronics, Peking University, Beijing 100871, China.
School of Information & Communication Engineering, Beijing Information Science & Technology University, Beijing 100101, China.
Membranes (Basel). 2021 Nov 26;11(12):929. doi: 10.3390/membranes11120929.
InSnO (ITO) thin-film transistors (TFTs) attract much attention in fields of displays and low-cost integrated circuits (IC). In the present work, we demonstrate the high-performance, robust ITO TFTs that fabricated at process temperature no higher than 100 °C. The influences of channel thickness (t, respectively, 6, 9, 12, and 15 nm) on device performance and positive bias stress (PBS) stability of the ITO TFTs are examined. We found that content of oxygen defects positively correlates with t, leading to increases of both trap states as well as carrier concentration and synthetically determining electrical properties of the ITO TFTs. Interestingly, the ITO TFTs with a t of 9 nm exhibit the best performance and PBS stability, and typical electrical properties include a field-effect mobility (µ) of 37.69 cm/Vs, a V of -2.3 V, a SS of 167.49 mV/decade, and an on-off current ratio over 10. This work paves the way for practical application of the ITO TFTs.
氧化铟锡（ITO）薄膜晶体管（TFT）在显示器和低成本集成电路（IC）领域备受关注。在本工作中，我们展示了在不高于100°C的工艺温度下制造的高性能、稳健的ITO TFT。研究了沟道厚度（t，分别为6、9、12和15纳米）对ITO TFT器件性能和正偏压应力（PBS）稳定性的影响。我们发现氧缺陷含量与t呈正相关，导致陷阱态以及载流子浓度增加，并综合决定了ITO TFT的电学性能。有趣的是，沟道厚度为9纳米的ITO TFT表现出最佳性能和PBS稳定性，典型电学性能包括场效应迁移率（µ）为37.69厘米²/伏·秒、阈值电压（Vth）为-2.3伏、亚阈值摆幅（SS）为167.49毫伏/十倍频程，以及开/关电流比超过10。这项工作为ITO TFT的实际应用铺平了道路。
