Meraj Sheikh Tanzim, Yahaya Nor Zaihar, Hossain Lipu Molla Shahadat, Islam Jahedul, Haw Law Kah, Hasan Kamrul, Miah Md Sazal, Ansari Shaheer, Hussain Aini
Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia.
Department of Electrical, Electronic and Systems Engineering, Universiti Kebangsaan Malaysia, Bangi 43600, Selangor, Malaysia.
Micromachines (Basel). 2021 Nov 27;12(12):1466. doi: 10.3390/mi12121466.
In this paper, the performance of an active neutral point clamped (ANPC) inverter is evaluated, which is developed utilizing both silicon (Si) and gallium trioxide (GaO) devices. The hybridization of semiconductor devices is performed since the production volume and fabrication of ultra-wide bandgap (UWBG) semiconductors are still in the early-stage, and they are highly expensive. In the proposed ANPC topology, the Si devices are operated at a low switching frequency, while the GaO switches are operated at a higher switching frequency. The proposed ANPC mitigates the fault current in the switching devices which are prevalent in conventional ANPCs. The proposed ANPC is developed by applying a specified modulation technique and an intelligent switching arrangement, which has further improved its performance by optimizing the loss distribution among the Si/GaO devices and thus effectively increases the overall efficiency of the inverter. It profoundly reduces the common mode current stress on the switches and thus generates a lower common-mode voltage on the output. It can also operate at a broad range of power factors. The paper extensively analyzed the switching performance of UWBG semiconductor (GaO) devices using double pulse testing (DPT) and proper simulation results. The proposed inverter reduced the fault current to 52 A and achieved a maximum efficiency of 99.1%.
本文评估了一种有源中性点箝位（ANPC）逆变器的性能，该逆变器是利用硅（Si）和三氧化二镓（GaO）器件开发的。由于超宽带隙（UWBG）半导体的产量和制造仍处于早期阶段且成本高昂，因此进行了半导体器件的混合使用。在所提出的ANPC拓扑结构中，Si器件以低开关频率运行，而GaO开关以较高开关频率运行。所提出的ANPC减轻了传统ANPC中开关器件中普遍存在的故障电流。所提出的ANPC通过应用特定的调制技术和智能开关布置来开发，通过优化Si/GaO器件之间的损耗分布进一步提高了其性能，从而有效地提高了逆变器的整体效率。它极大地降低了开关上的共模电流应力，从而在输出端产生较低的共模电压。它还可以在很宽的功率因数范围内运行。本文使用双脉冲测试（DPT）和适当的仿真结果广泛分析了UWBG半导体（GaO）器件的开关性能。所提出的逆变器将故障电流降低到52 A，并实现了99.1%的最高效率。
