Yang Wen, Xin Kaiyao, Yang Juehan, Xu Qun, Shan Chongxin, Wei Zhongming
School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, China.
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Small Methods. 2022 Apr;6(4):e2101348. doi: 10.1002/smtd.202101348. Epub 2022 Mar 11.
2D ultrawide bandgap (UWBG) semiconductors have aroused increasing interest in the field of high-power transparent electronic devices, deep-ultraviolet photodetectors, flexible electronic skins, and energy-efficient displays, owing to their intriguing physical properties. Compared with dominant narrow bandgap semiconductor material families, 2D UWBG semiconductors are less investigated but stand out because of their propensity for high optical transparency, tunable electrical conductivity, high mobility, and ultrahigh gate dielectrics. At the current stage of research, the most intensively investigated 2D UWBG semiconductors are metal oxides, metal chalcogenides, metal halides, and metal nitrides. This paper provides an up-to-date review of recent research progress on new 2D UWBG semiconductor materials and novel physical properties. The widespread applications, i.e., transistors, photodetector, touch screen, and inverter are summarized, which employ 2D UWBG semiconductors as either a passive or active layer. Finally, the existing challenges and opportunities of the enticing class of 2D UWBG semiconductors are highlighted.
二维超宽带隙（UWBG）半导体因其引人入胜的物理特性，在高功率透明电子器件、深紫外光电探测器、柔性电子皮肤和节能显示器领域引起了越来越多的关注。与占主导地位的窄带隙半导体材料家族相比，二维UWBG半导体的研究较少，但因其具有高光学透明度、可调电导率、高迁移率和超高栅极介电常数的倾向而脱颖而出。在当前的研究阶段，研究最为深入的二维UWBG半导体是金属氧化物、金属硫族化物、金属卤化物和金属氮化物。本文对新型二维UWBG半导体材料及其新颖物理特性的最新研究进展进行了综述。总结了二维UWBG半导体作为无源或有源层的广泛应用，即晶体管、光电探测器、触摸屏和逆变器。最后，强调了二维UWBG半导体这一诱人领域目前存在的挑战和机遇。
