Chen Zhijiang, Lin Na, Yang Zhao, Zhang Juan, Shi Kefei, Sun Xinhao, Gao Bo, Zhao Tianlong
Institute of Materials, China Academy of Engineering Physics, Mianyang 621907, China.
School of Microelectronics, Xidian University, Xi'an 710071, China.
Micromachines (Basel). 2021 Dec 13;12(12):1556. doi: 10.3390/mi12121556.
Cobalt-modified 0.40Bi(ScIn)O-0.58PbTiO-0.02Pb(MgNb)O ceramics (abbreviated as BSI-PT-PMN-Co) were produced by conventional two-step solid-state processing. The phase structure, micro structure morphology, and electrical properties of BSI-PT-PMN-Co were systematically studied. The introduction of Co ions exerted a significant influence on the structure and electrical properties. The experiment results demonstrated that Co ions entered the -sites of the lattice, resulting in slight lattice distortion and a smaller lattice constant. The average grain size increased from ~1.94 μm to ~2.68 μm with the increasing Co content. The optimized comprehensive electrical properties were obtained with proper Co-modified content 0.2 wt.%. The Curie temperature () was 412 °C, the piezoelectric constant () was 370 pC/N, the remnant polarization () was 29.2 μC/cm, the relatively dielectric constant () was 1450, the planar electromechanical coupling coefficient () was 46.5, and the dielectric loss (tan) was 0.051. Together with the enhanced DC resistivity of 10 Ω cm under 300 °C and good thermal stability, BSI-PT-PMN-0.2Co ceramic is a promising candidate material for high-temperature piezoelectric applications.
采用传统的两步固相法制备了钴改性的0.40Bi(ScIn)O-0.58PbTiO-0.02Pb(MgNb)O陶瓷（简称为BSI-PT-PMN-Co）。系统研究了BSI-PT-PMN-Co的相结构、微观结构形态和电学性能。钴离子的引入对结构和电学性能产生了显著影响。实验结果表明，钴离子进入晶格的-位，导致轻微的晶格畸变和较小的晶格常数。随着钴含量的增加，平均晶粒尺寸从约1.94μm增加到约2.68μm。当钴改性含量为0.2 wt.%时，获得了优化的综合电学性能。居里温度（）为412℃，压电常数（）为370 pC/N，剩余极化强度（）为29.2μC/cm，相对介电常数（）为1450，平面机电耦合系数（）为46.5，介电损耗（tan）为0.051。BSI-PT-PMN-0.2Co陶瓷在300℃下具有增强的直流电阻率10Ω·cm以及良好的热稳定性，是高温压电应用中有潜力的候选材料。
