Guo Jian, Yan Ming-Yuan, Yu Hao-Ran, Zhang Ji, Yuan Guoliang, Zhang Shan-Tao
National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China.
School of Materials Science and Engineering, Nanjing University of Science & Technology, Nanjing 210094, China.
Dalton Trans. 2024 Oct 1;53(38):16054-16065. doi: 10.1039/d4dt02007c.
Piezoelectric ceramics with high electrical performances and high Curie temperature () act as key materials for numerous electromechanical devices such as transducers and actuators. Herein, we report a systematic investigation on the crystal structure, microstructure and electrical properties of Sr and La co-doped Pb(MgNb)O-PbZrO-PbTiO ceramics with a low Pb(MgNb)O content, namely, (PbSr)(MgNb)ZrTiO:La. With an increase in the Zr content ( value) from 0.49 to 0.53, its crystal structure evolved from a tetragonal phase to a rhombohedral phase, leading to not only a morphotropic phase boundary (MPB) at around = 0.51 but also a monotonously decreasing . Meanwhile, a change in either the Sr- or La-doping content ( and values, respectively) in the range of = 0.03-0.07 and = 0.01-0.03 can slightly deviate the structure of MPB, resulting in a significant effect on its electrical properties. As the best results, the optimal composition of = 0.51, = 0.05, and = 0.02 yielded peak electrical performance, with a related room temperature piezoelectric coefficient () of 645 pC N, remanent polarization () of 33.5 μC cm, coercive field () of 8.6 kV cm, and of 242 °C. Especially, its piezoelectric properties showed excellent temperature stability, and its value decreased by only 3% from room temperature to 150 °C. This work not only provides an alternative piezoelectric ceramic with outstanding electrical performance for industrial applications, but also reveals a comprehensive perspective on the composition-structure-property relationship of doped Pb[(MgNb),Zr,Ti]O, which is helpful for further work on piezoelectric ceramics.
具有高电学性能和高居里温度()的压电陶瓷是换能器和致动器等众多机电装置的关键材料。在此,我们报道了对低Pb(MgNb)O含量的Sr和La共掺杂Pb(MgNb)O-PbZrO-PbTiO陶瓷,即(PbSr)(MgNb)ZrTiO:La的晶体结构、微观结构和电学性能的系统研究。随着Zr含量(值)从0.49增加到0.53,其晶体结构从四方相演变为菱方相,不仅在约 = 0.51处导致一个准同型相界(MPB),而且导致单调下降。同时,在 = 0.03 - 0.07和 = 0.01 - 0.03范围内,Sr或La掺杂含量(分别为和值)的变化可使MPB结构略有偏离,从而对其电学性能产生显著影响。作为最佳结果, = 0.51、 = 0.05和 = 0.02的最佳组成产生了峰值电学性能,相关的室温压电系数()为645 pC/N,剩余极化()为33.5 μC/cm,矫顽场()为8.6 kV/cm,居里温度为242 °C。特别是,其压电性能表现出优异的温度稳定性,其值从室温到150 °C仅下降3%。这项工作不仅为工业应用提供了一种具有出色电学性能的替代压电陶瓷,还揭示了掺杂Pb[(MgNb),Zr,Ti]O的组成-结构-性能关系的全面观点,这有助于压电陶瓷的进一步研究。