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半导体纳米线场效应晶体管作为远红外敏感探测器

Semiconductor Nanowire Field-Effect Transistors as Sensitive Detectors in the Far-Infrared.

作者信息

Asgari Mahdi, Viti Leonardo, Zannier Valentina, Sorba Lucia, Vitiello Miriam Serena

机构信息

NEST, CNR-Istituto Nanoscienze and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy.

出版信息

Nanomaterials (Basel). 2021 Dec 13;11(12):3378. doi: 10.3390/nano11123378.

DOI:10.3390/nano11123378
PMID:34947727
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8705442/
Abstract

Engineering detection dynamics in nanoscale receivers that operate in the far infrared (frequencies in the range 0.1-10 THz) is a challenging task that, however, can open intriguing perspectives for targeted applications in quantum science, biomedicine, space science, tomography, security, process and quality control. Here, we exploited InAs nanowires (NWs) to engineer antenna-coupled THz photodetectors that operated as efficient bolometers or photo thermoelectric receivers at room temperature. We controlled the core detection mechanism by design, through the different architectures of an on-chip resonant antenna, or dynamically, by varying the NW carrier density through electrostatic gating. Noise equivalent powers as low as 670 pWHz with 1 µs response time at 2.8 THz were reached.

摘要

在远红外(频率范围为0.1 - 10太赫兹)运行的纳米级接收器中设计检测动力学是一项具有挑战性的任务,然而,这可以为量子科学、生物医学、空间科学、断层扫描、安全、过程和质量控制等目标应用开辟引人入胜的前景。在这里,我们利用砷化铟纳米线(NWs)设计了天线耦合太赫兹光电探测器,该探测器在室温下作为高效测辐射热计或光热接收器运行。我们通过设计片上谐振天线的不同架构来控制核心检测机制,或者通过静电门控改变NW载流子密度来动态控制。在2.8太赫兹时,响应时间为1微秒,噪声等效功率低至670皮瓦/赫兹。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d266/8705442/40d0c42c589d/nanomaterials-11-03378-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d266/8705442/43e3fb0580db/nanomaterials-11-03378-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d266/8705442/71464ed52581/nanomaterials-11-03378-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d266/8705442/9d1c74c39f60/nanomaterials-11-03378-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d266/8705442/49e61b7b5483/nanomaterials-11-03378-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d266/8705442/40d0c42c589d/nanomaterials-11-03378-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d266/8705442/43e3fb0580db/nanomaterials-11-03378-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d266/8705442/71464ed52581/nanomaterials-11-03378-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d266/8705442/9d1c74c39f60/nanomaterials-11-03378-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d266/8705442/49e61b7b5483/nanomaterials-11-03378-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d266/8705442/40d0c42c589d/nanomaterials-11-03378-g005.jpg

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本文引用的文献

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Antenna-coupled field-effect transistors as detectors for terahertz near-field microscopy.用于太赫兹近场显微镜的天线耦合场效应晶体管探测器
Nanoscale Adv. 2021 Feb 12;3(6):1717-1724. doi: 10.1039/d0na00928h. eCollection 2021 Mar 23.
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Chip-Scalable, Room-Temperature, Zero-Bias, Graphene-Based Terahertz Detectors with Nanosecond Response Time.具有纳秒响应时间的芯片可扩展、室温、零偏置、基于石墨烯的太赫兹探测器。
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Quantum-Dot Single-Electron Transistors as Thermoelectric Quantum Detectors at Terahertz Frequencies.
量子点单电子晶体管作为太赫兹频率下的热电量子探测器
Nano Lett. 2021 Oct 27;21(20):8587-8594. doi: 10.1021/acs.nanolett.1c02022. Epub 2021 Oct 7.
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Sensitivity of Field-Effect Transistor-Based Terahertz Detectors.基于场效应晶体管的太赫兹探测器的灵敏度
Sensors (Basel). 2021 Apr 21;21(9):2909. doi: 10.3390/s21092909.
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A Comprehensive Review on Food Applications of Terahertz Spectroscopy and Imaging.太赫兹光谱与成像技术在食品应用方面的综合综述
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Unveiling the detection dynamics of semiconductor nanowire photodetectors by terahertz near-field nanoscopy.通过太赫兹近场纳米显微镜揭示半导体纳米线光电探测器的探测动力学
Light Sci Appl. 2020 Nov 19;9(1):189. doi: 10.1038/s41377-020-00425-1.
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Assembling your nanowire: an overview of composition tuning in ternary III-V nanowires.组装你的纳米线:三元III-V族纳米线成分调控概述
Nanotechnology. 2021 Feb 12;32(7):072001. doi: 10.1088/1361-6528/abc3e2.
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Nanotechnology. 2020 Sep 18;31(38):384002. doi: 10.1088/1361-6528/ab9aee. Epub 2020 Jun 9.
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