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基于场效应晶体管的太赫兹探测器的灵敏度

Sensitivity of Field-Effect Transistor-Based Terahertz Detectors.

作者信息

Javadi Elham, But Dmytro B, Ikamas Kęstutis, Zdanevičius Justinas, Knap Wojciech, Lisauskas Alvydas

机构信息

CENTERA Laboratories, Institute of High Pressure Physics PAS, 01-142 Warsaw, Poland.

CEZAMAT, Warsaw Technical University, 02-822 Warsaw, Poland.

出版信息

Sensors (Basel). 2021 Apr 21;21(9):2909. doi: 10.3390/s21092909.

DOI:10.3390/s21092909
PMID:33919219
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8122696/
Abstract

This paper presents an overview of the different methods used for sensitivity (i.e., responsivity and noise equivalent power) determination of state-of-the-art field-effect transistor-based THz detectors/sensors. We point out that the reported result may depend very much on the method used to determine the effective area of the sensor, often leading to discrepancies of up to orders of magnitude. The challenges that arise when selecting a proper method for characterisation are demonstrated using the example of a 2×7 detector array. This array utilises field-effect transistors and monolithically integrated patch antennas at 620 GHz. The directivities of the individual antennas were simulated and determined from the measured angle dependence of the rectified voltage, as a function of tilting in the E- and H-planes. Furthermore, this study shows that the experimentally determined directivity and simulations imply that the part of radiation might still propagate in the substrate, resulting in modification of the sensor effective area. Our work summarises the methods for determining sensitivity which are paving the way towards the unified scientific metrology of FET-based THz sensors, which is important for both researchers competing for records, potential users, and system designers.

摘要

本文概述了用于确定基于场效应晶体管的最新太赫兹探测器/传感器灵敏度(即响应度和噪声等效功率)的不同方法。我们指出,报告的结果可能在很大程度上取决于用于确定传感器有效面积的方法,这常常导致数量级高达几个数量级的差异。以一个2×7探测器阵列为例,展示了选择合适的表征方法时所面临的挑战。该阵列在620 GHz频率下利用场效应晶体管和单片集成贴片天线。通过测量整流电压随在E平面和H平面倾斜的角度依赖性,模拟并确定了各个天线的方向图。此外,本研究表明,实验确定的方向图和模拟结果表明,部分辐射可能仍在衬底中传播,从而导致传感器有效面积发生变化。我们的工作总结了确定灵敏度的方法,这些方法为基于场效应晶体管的太赫兹传感器的统一科学计量学铺平了道路,这对争夺记录的研究人员、潜在用户和系统设计师都很重要。

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2
Hyperspectral terahertz imaging with electro-optic dual combs and a FET-based detector.基于电光双梳和场效应晶体管探测器的高光谱太赫兹成像
Sci Rep. 2020 Sep 2;10(1):14429. doi: 10.1038/s41598-020-71258-6.
3
HBN-Encapsulated, Graphene-based, Room-temperature Terahertz Receivers, with High Speed and Low Noise.
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Nanophotonics. 2022 Jan 4;11(3):519-529. doi: 10.1515/nanoph-2021-0573. eCollection 2022 Jan.
4
A CMOS-integrated terahertz near-field sensor based on an ultra-strongly coupled meta-atom.一种基于超强耦合元原子的互补金属氧化物半导体集成太赫兹近场传感器。
Sci Rep. 2024 May 20;14(1):11483. doi: 10.1038/s41598-024-61971-x.
5
Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO.基于VO中可逆绝缘体-金属转变的毫米波至近太赫兹传感器。
Commun Mater. 2023;4(1):34. doi: 10.1038/s43246-023-00350-x. Epub 2023 May 22.
6
Parasitic mixing in photomixers as continuous wave terahertz sources.作为连续波太赫兹源的光混频器中的寄生混频。
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7
Comparative Study of Single Crystal and Polymeric Pyroelectric Detectors in the 0.9-2.0 THz Range Using Monochromatic Laser Radiation of the NovoFEL.使用NovoFEL单色激光辐射对0.9 - 2.0太赫兹范围内的单晶和聚合物热释电探测器进行的对比研究。
Polymers (Basel). 2023 Oct 18;15(20):4124. doi: 10.3390/polym15204124.
8
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Sensors (Basel). 2022 Nov 4;22(21):8485. doi: 10.3390/s22218485.
基于石墨烯且封装有六方氮化硼的室温太赫兹高速低噪声接收器。
Nano Lett. 2020 May 13;20(5):3169-3177. doi: 10.1021/acs.nanolett.9b05207. Epub 2020 Apr 17.
4
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Nano Lett. 2019 May 8;19(5):2765-2773. doi: 10.1021/acs.nanolett.8b04171. Epub 2019 Apr 5.
5
Resonant terahertz detection using graphene plasmons.使用石墨烯等离子体的太赫兹共振检测。
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6
Terahertz Detection and Imaging Using Graphene Ballistic Rectifiers.太赫兹探测与成像的石墨烯弹道整流器应用。
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Efficient Terahertz detection in black-phosphorus nano-transistors with selective and controllable plasma-wave, bolometric and thermoelectric response.黑磷纳米晶体管中具有选择性和可控等离子体波、测辐射热和热电响应的高效太赫兹探测。
Sci Rep. 2016 Feb 5;6:20474. doi: 10.1038/srep20474.
9
Improvement of terahertz field effect transistor detectors by substrate thinning and radiation losses reduction.
Opt Express. 2016 Jan 11;24(1):272-81. doi: 10.1364/OE.24.000272.
10
Black Phosphorus Terahertz Photodetectors.黑磷太赫兹探测器。
Adv Mater. 2015 Oct 7;27(37):5567-72. doi: 10.1002/adma.201502052. Epub 2015 Aug 13.