He Qing Lin, Hughes Taylor L, Armitage N Peter, Tokura Yoshinori, Wang Kang L
International Center for Quantum Materials, School of Physics, Peking University, Beijing, China.
Collaborative Innovation Center of Quantum Matter, Beijing, China.
Nat Mater. 2022 Jan;21(1):15-23. doi: 10.1038/s41563-021-01138-5. Epub 2021 Dec 23.
Topological electronic materials, such as topological insulators, are distinct from trivial materials in the topology of their electronic band structures that lead to robust, unconventional topological states, which could bring revolutionary developments in electronics. This Perspective summarizes developments of topological insulators in various electronic applications including spintronics and magnetoelectronics. We group and analyse several important phenomena in spintronics using topological insulators, including spin-orbit torque, the magnetic proximity effect, interplay between antiferromagnetism and topology, and the formation of topological spin textures. We also outline recent developments in magnetoelectronics such as the axion insulator and the topological magnetoelectric effect observed using different topological insulators.
拓扑电子材料，如拓扑绝缘体，在其电子能带结构的拓扑结构上与平凡材料不同，这种拓扑结构会导致稳健的、非常规的拓扑态，这可能会给电子学带来革命性的发展。本综述总结了拓扑绝缘体在包括自旋电子学和磁电子学在内的各种电子应用中的发展情况。我们对使用拓扑绝缘体的自旋电子学中的几个重要现象进行了分类和分析，包括自旋轨道转矩、磁近邻效应、反铁磁性与拓扑之间的相互作用以及拓扑自旋纹理的形成。我们还概述了磁电子学的最新进展，如使用不同拓扑绝缘体观察到的轴子绝缘体和拓扑磁电效应。
