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基于二维材料的先进宽带光电探测器的最新进展

Recent Developments of Advanced Broadband Photodetectors Based on 2D Materials.

作者信息

Tian Yan, Liu Hao, Li Jing, Liu Baodan, Liu Fei

机构信息

School of Materials Science and Engineering, Northeastern University, No. 11, Wenhua Road, Shenyang 110819, China.

State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China.

出版信息

Nanomaterials (Basel). 2025 Mar 11;15(6):431. doi: 10.3390/nano15060431.

Abstract

With the rapid development of high-speed imaging, aerospace, and telecommunications, high-performance photodetectors across a broadband spectrum are urgently demanded. Due to abundant surface configurations and exceptional electronic properties, two-dimensional (2D) materials are considered as ideal candidates for broadband photodetection applications. However, broadband photodetectors with both high responsivity and fast response time remain a challenging issue for all the researchers. This review paper is organized as follows. Introduction introduces the fundamental properties and broadband photodetection performances of transition metal dichalcogenides (TMDCs), perovskites, topological insulators, graphene, and black phosphorus (BP). This section provides an in-depth analysis of their unique optoelectronic properties and probes the intrinsic physical mechanism of broadband detection. In Two-Dimensional Material-Based Broadband Photodetectors, some innovative strategies are given to expand the detection wavelength range of 2D material-based photodetectors and enhance their overall performances. Among them, chemical doping, defect engineering, constructing heterostructures, and strain engineering methods are found to be more effective for improving their photodetection performances. The last section addresses the challenges and future prospects of 2D material-based broadband photodetectors. Furthermore, to meet the practical requirements for very large-scale integration (VLSI) applications, their work reliability, production cost and compatibility with planar technology should be paid much attention.

摘要

随着高速成像、航空航天和电信领域的快速发展,迫切需要宽带光谱范围内的高性能光电探测器。由于二维材料具有丰富的表面构型和优异的电子特性,被认为是宽带光电探测应用的理想候选材料。然而,对于所有研究人员来说,兼具高响应度和快速响应时间的宽带光电探测器仍然是一个具有挑战性的问题。本文综述如下。引言部分介绍了过渡金属二硫属化物(TMDCs)、钙钛矿、拓扑绝缘体、石墨烯和黑磷(BP)的基本特性和宽带光电探测性能。本节深入分析了它们独特的光电特性,并探究了宽带探测的内在物理机制。在基于二维材料的宽带光电探测器部分,给出了一些创新策略来扩展基于二维材料的光电探测器的探测波长范围并提高其整体性能。其中,化学掺杂、缺陷工程、构建异质结构和应变工程方法被发现对提高其光电探测性能更有效。最后一部分讨论了基于二维材料的宽带光电探测器面临的挑战和未来前景。此外,为满足超大规模集成(VLSI)应用的实际需求,应高度关注其工作可靠性、生产成本以及与平面技术的兼容性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/add4/11945223/ab7615da8234/nanomaterials-15-00431-g001.jpg

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