Monteiro Cancio, Takahashi Yasuhiro
Department of Electronics and Electrical Engineering (EEE), Faculty of Engineering, Science and Technology, Universidade Nacional Timor Lorosa'e (UNTL), Avenida Hera, Cristo-Rei, Dili 314, Timor-Leste.
Department of Electrical, Electronic and Computer Engineering, Faculty of Engineering, Gifu University, 1-1 Yanagido, Gifu-shi 501-1193, Japan.
Sensors (Basel). 2021 Dec 11;21(24):8302. doi: 10.3390/s21248302.
Low-power and secure crypto-devices are in crucial demand for the current emerging technology of the Internet of Things (IoT). In nanometer CMOS technology, the static and dynamic power consumptions are in a very critical challenge. Therefore, the FinFETs is an alternative technology due to its superior attributes of non-leakage power, intra-die variability, low-voltage operation, and lower retention voltage of SRAMs. In this study, our previous work on CMOS two-phase clocking adiabatic physical unclonable function (TPCA-PUF) is evaluated in a FinFET device with a 4-bits PUF circuit complexity. The TPCA-PUF-based shorted-gate (SG) and independent-gate (IG) modes of FinFETs are investigated under various ambient temperatures, process variations, and ±20% of supply voltage variations. To validate the proposed TPCA-PUF circuit, the QUALPFU-based Fin-FETs are compared in terms of cyclical energy dissipation, the security metrics of the uniqueness, the reliability, and the bit-error-rate (BER). The proposed TPCA-PUF is simulated using 45 nm process technology with a supply voltage of 1 V. The uniqueness, reliability, and the BER of the proposed TPCA-PUF are 50.13%, 99.57%, and 0.43%, respectively. In addition, it requires a start-up power of 18.32 nW and consumes energy of 2.3 fJ/bit/cycle at the reference temperature of 27 °C.
低功耗且安全的加密设备对于当前新兴的物联网（IoT）技术至关重要。在纳米CMOS技术中，静态和动态功耗面临着非常严峻的挑战。因此，鳍式场效应晶体管（FinFET）是一种替代技术，因为它具有无泄漏功耗、芯片内变化小、低电压操作以及静态随机存取存储器（SRAM）的保持电压较低等优越特性。在本研究中，我们之前关于CMOS两相时钟绝热物理不可克隆函数（TPCA-PUF）的工作在具有4位PUF电路复杂度的FinFET器件中进行了评估。研究了基于TPCA-PUF的FinFET的短路栅（SG）和独立栅（IG）模式在各种环境温度、工艺变化以及±20%的电源电压变化下的情况。为了验证所提出的TPCA-PUF电路，对基于QUALPFU的FinFET在循环能量耗散、唯一性、可靠性和误码率（BER）等安全指标方面进行了比较。所提出的TPCA-PUF使用45纳米工艺技术、1伏电源电压进行了模拟。所提出的TPCA-PUF的唯一性、可靠性和BER分别为50.13%、99.57%和0.43%。此外，在27°C的参考温度下，它需要18.32纳瓦的启动功率，每比特每周期消耗2.3飞焦的能量。
