Zhang Yujing, Wang Ximiao, Zhou Yang, Lai Haojie, Liu Pengyi, Chen Huanjun, Wang Xiaomu, Xie Weiguang
Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, People's Republic of China.
State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, Guangdong 510275, People's Republic of China.
Nano Lett. 2022 Jan 12;22(1):485-493. doi: 10.1021/acs.nanolett.1c04393. Epub 2021 Dec 30.
In this study, Wadsley B phase vanadium oxide (VO(B)) with broad-band photoabsorption ability, a large temperature coefficient of resistance (TCR), and low noise was developed for uncooled broad-band detection. By using a freestanding structure and reducing the size of active area, the VO(B) photodetector shows stable and excellent performances in the visible to the terahertz region (405 nm to 0.88 mm), with a peak TCR of -4.77% K at 40 °C, a peak specific detectivity of 6.02 × 10 Jones, and a photoresponse time of 83 ms. A terahertz imaging ability with 30 × 30 pixels was demonstrated. Scanning photocurrent imaging and real-time temperature-photocurrent measurements confirm that a photothermal-type bolometric effect is the dominating mechanism. The study shows the potential of VO(B) in applications as a new type of uncooled broad-band photodetection material and the potential to further raise the performance of broad-band photodetectors by structural design.
在本研究中，开发了具有宽带光吸收能力、大电阻温度系数（TCR）和低噪声的沃兹利B相氧化钒（VO(B)）用于非制冷宽带探测。通过采用独立结构并减小有源区尺寸，VO(B)光电探测器在可见光到太赫兹区域（405nm至0.88mm）表现出稳定且优异的性能，在40°C时峰值TCR为-4.77%/K，峰值比探测率为6.02×10琼斯，光响应时间为83ms。展示了具有30×30像素的太赫兹成像能力。扫描光电流成像和实时温度-光电流测量证实光热型测辐射热效应是主导机制。该研究表明VO(B)作为一种新型非制冷宽带光探测材料在应用中的潜力，以及通过结构设计进一步提高宽带光电探测器性能的潜力。
