Lin Jiawei, Liu Kunjie, Ruan Hang, Sun Niu, Chen Xin, Zhao Jing, Guo Zhongnan, Liu Quanlin, Yuan Wenxia
Department of Chemistry, School of Chemistry and Biological Engineering, University of Science and Technology Beijing, Beijing 100083, China.
The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing 100083, China.
J Phys Chem Lett. 2022 Jan 13;13(1):198-207. doi: 10.1021/acs.jpclett.1c03649. Epub 2021 Dec 30.
Three new lead-free organic-inorganic metal halides (OIMHs) (CHN)InX·HO (X = Cl, Br) and (CHN)SbBr were synthesized. First-principles calculations indicate that the highest occupied molecular orbitals (HOMOs) of the two In-based OIMHs are constituted of π orbitals from [CHN] spacers. (CHN)InX·HO (X = Cl, Br) shows an indirect optical gap, which may result from this organic-contributed band edge. Despite the indirect-gap nature with extra phonon process during absorption, the photoluminescence of (CHN)InBr·HO can still be significantly enhanced through Sb doping, with the internal photoluminescence quantum yields (PLQY) increased 10-fold from 5% to 52%. A white light-emitting diode (WLED) was fabricated based on (CHN)InBr·HO:Sb, exhibiting a high color-rendering index of 90. Our work provides new systems to deeply understand the principles for organic spacer choice to obtain the 0D metal OIMHs with specific band structure and also the significant enhancement of luminescence performance by chemical doping.
合成了三种新型无铅有机-无机金属卤化物(OIMHs)(CHN)InX·HO(X = Cl,Br)和(CHN)SbBr。第一性原理计算表明,两种基于铟的OIMHs的最高占据分子轨道(HOMOs)由来自[CHN]间隔基的π轨道构成。(CHN)InX·HO(X = Cl,Br)表现出间接光学带隙,这可能是由这种有机贡献的带边导致的。尽管在吸收过程中具有间接带隙性质且存在额外的声子过程,但通过锑掺杂,(CHN)InBr·HO的光致发光仍可显著增强,其内部光致发光量子产率(PLQY)从5%提高到52%,提高了10倍。基于(CHN)InBr·HO:Sb制备了白光发光二极管(WLED),其显色指数高达90。我们的工作提供了新的体系,以深入理解选择有机间隔基以获得具有特定能带结构的零维金属OIMHs的原理,以及通过化学掺杂显著提高发光性能的原理。