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通过直接电子束辐照工艺创建的低电阻率钯纳米图案,无需后处理步骤。

Low-resistivity Pd nanopatterns created by a direct electron beam irradiation process free of post-treatment steps.

作者信息

Salvador-Porroche Alba, Herrer Lucía, Sangiao Soraya, de Teresa José María, Cea Pilar

机构信息

Instituto de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza, E-50009 Zaragoza, Spain.

Departamento de Física de la Materia Condensada, Facultad de Ciencias, Universidad de Zaragoza, E-50009 Zaragoza, Spain.

出版信息

Nanotechnology. 2022 Jul 14;33(40). doi: 10.1088/1361-6528/ac47cf.

Abstract

The ability to create metallic patterned nanostructures with excellent control of size, shape and spatial orientation is of utmost importance in the construction of next-generation electronic and optical devices as well as in other applications such as (bio)sensors, reactive surfaces for catalysis, etc. Moreover, development of simple, rapid and low-cost fabrication processes of metallic patterned nanostructures is a challenging issue for the incorporation of such devices in real market applications. In this contribution, a direct-write method that results in highly conducting palladium-based nanopatterned structures without the need of applying subsequent curing processes is presented. Spin-coated films of palladium acetate were irradiated with an electron beam to produce palladium nanodeposits (PdNDs) with controlled size, shape and height. The use of different electron doses was investigated and its influence on the PdNDs features determined, namely: (1) thickness of the deposits, (2) atomic percentage of palladium content, (3) oxidation state of palladium in the deposit, (4) morphology of the sample and grain size of the Pd nanocrystals and (5) resistivity. It has been probed that the use of high electron doses, 30000C cmresults in the lowest resistivity reported to date for PdNDs, namely 145Ω cm, which is only one order of magnitude higher than bulk palladium. This result paves the way for development of simplified lithography processes of nanostructured deposits avoiding subsequent post-treatment steps.

摘要

能够精确控制尺寸、形状和空间取向来制造金属图案化纳米结构,对于下一代电子和光学器件的构建以及其他应用(如(生物)传感器、催化反应表面等)至关重要。此外,开发简单、快速且低成本的金属图案化纳米结构制造工艺,对于将此类器件纳入实际市场应用而言是一个具有挑战性的问题。在本论文中,我们提出了一种直写方法,该方法能够直接形成高导电性的钯基纳米图案结构,无需后续的固化工艺。通过电子束辐照旋涂的醋酸钯薄膜,制备出尺寸、形状和高度可控的钯纳米沉积物(PdNDs)。研究了不同电子剂量的使用情况,并确定了其对PdNDs特性的影响,具体如下:(1)沉积物的厚度;(2)钯含量的原子百分比;(3)沉积物中钯的氧化态;(4)样品的形态以及钯纳米晶体的晶粒尺寸;(5)电阻率。研究发现,使用30000C/cm的高电子剂量可使PdNDs的电阻率达到迄今为止报道的最低值,即145Ω·cm,仅比块状钯高一个数量级。这一结果为开发简化的纳米结构沉积物光刻工艺铺平了道路,避免了后续的后处理步骤。

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