Bolshakov Alexey D, Shishkin Ivan, Machnev Andrey, Petrov Mihail, Kirilenko Demid A, Fedorov Vladimir V, Mukhin Ivan S, Ginzburg Pavel
Alferov University (formerly St Petersburg Academic University), 194021 St Petersburg, Russia.
Centre for Photonics and Two-Dimensional Materials, Moscow Institute of Physics and Technology, 141701 Dolgoprudny, Russia.
Nanoscale. 2022 Jan 20;14(3):993-1000. doi: 10.1039/d1nr04790f.
Semiconductor nanowires exhibit numerous capabilities to advance the development of future optoelectronic devices. Among the III-V material family, gallium phosphide (GaP) is an attractive platform with low optical absorption and high nonlinear susceptibility, making it especially promising for nanophotonic applications. However, investigation of single nanostructures and their waveguiding properties remains challenging owing to typically planar experimental arrangements. Here we study the linear and nonlinear waveguiding optical properties of a single GaP nanowire in a special experimental layout, where an optically trapped structure is aligned along its major axis. We demonstrate efficient second harmonic generation in individual nanowires and unravel phase matching conditions, linking between linear guiding properties of the structure and its nonlinear tensorial susceptibility. The capability to pick up single nanowires, sort them with the aid of optomechanical manipulation and accurately position pre-tested structures opens a new avenue for the generation of optoelectronic origami-type devices.
半导体纳米线展现出众多推动未来光电器件发展的能力。在III-V族材料中，磷化镓（GaP）是一个具有吸引力的平台，它具有低光吸收和高非线性极化率，这使其在纳米光子学应用中特别有前景。然而，由于典型的平面实验布局，对单个纳米结构及其波导特性的研究仍然具有挑战性。在这里，我们在一种特殊的实验布局中研究了单个GaP纳米线的线性和非线性波导光学特性，在这种布局中，一个光学捕获结构沿其主轴对齐。我们展示了在单个纳米线中高效的二次谐波产生，并揭示了相位匹配条件，将结构的线性波导特性与其非线性张量极化率联系起来。拾取单个纳米线、借助光机械操纵对它们进行分类以及精确放置预先测试的结构的能力为光电子折纸型器件的产生开辟了一条新途径。
