Saerens Grégoire, Bloch Esther, Frizyuk Kristina, Sergaeva Olga, Vogler-Neuling Viola V, Semenova Elizaveta, Lebedkina Elizaveta, Petrov Mihail, Grange Rachel, Timofeeva Maria
ETH Zurich, Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics, 8093 Zürich, Switzerland.
ITMO University, Kronverkskiy prospect 49, 197101 St Petersburg, Russia.
Nanoscale. 2022 Jun 23;14(24):8858-8864. doi: 10.1039/d2nr00641c.
We present a wearable device with III-V nanowires in a flexible polymer, which is used for active mechanical tuning of the second-harmonic generation intensity. An array of vertical GaAs nanowires was grown with metalorganic vapour-phase epitaxy, then embedded in polydimethylsiloxane and detached from the rigid substrate with mechanical peel off. Experimental results show a tunability of the second-harmonic generation intensity by a factor of two for 30% stretching which matches the simulations including the distribution of sizes. We studied the impact of different parameters on the band dispersion and tunability of the second-harmonic generation, such as the pitch, the length, and the diameter. We predict at least three orders of magnitude active mechanical tuning of the nonlinear signal intensity for nanowire arrays. The flexibility of the array together with the resonant wavelength engineering make such structures perspective platforms for future bendable or stretchable nanophotonic devices as light sources or sensors.
我们展示了一种在柔性聚合物中集成III-V族纳米线的可穿戴设备，该设备用于对二次谐波产生强度进行主动机械调谐。通过金属有机气相外延生长出垂直排列的砷化镓纳米线阵列，然后将其嵌入聚二甲基硅氧烷中，并通过机械剥离使其与刚性衬底分离。实验结果表明，在30%的拉伸情况下，二次谐波产生强度的可调性可达两倍，这与包括尺寸分布在内的模拟结果相匹配。我们研究了不同参数对二次谐波产生的能带色散和可调性的影响，如间距、长度和直径。我们预测，对于纳米线阵列，非线性信号强度的主动机械调谐至少有三个数量级。阵列的灵活性以及共振波长工程使得此类结构成为未来用于光源或传感器等可弯曲或可拉伸纳米光子器件的有前景的平台。
