Chen Wen, Feng Meixin, Tang Yongjun, Wang Jian, Liu Jianxun, Sun Qian, Gao Xumin, Wang Yongjin, Yang Hui
Jiangxi Institute of Nanotechnology, Nanchang 330200, China.
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China.
Nanomaterials (Basel). 2021 Dec 31;12(1):134. doi: 10.3390/nano12010134.
GaN-on-Si resonant-cavity light-emitting diodes (RCLEDs) have been successfully fabricated through wafer bonding and Si substrate removal. By combining the chemical mechanical polishing technique, we obtained a roughness of about 0.24 nm for a scan area of 5 μm × 5 μm. The double-sided dielectric distributed Bragg reflectors could form a high-quality optical resonant cavity, and the cavity modes exhibited a linewidth of 1 nm at the peak wavelength of around 405 nm, corresponding to a quality factor of 405. High data transmission in free space with an opening in the eye diagram was exhibited at 150 Mbps, which is limited by the detection system. These results showed that GaN-based RCLEDs grown on Si are promising as a low-cost emitter for visible light communications in future.
通过晶圆键合和去除硅衬底，成功制备了硅基氮化镓谐振腔发光二极管（RCLED）。结合化学机械抛光技术，在5μm×5μm的扫描区域内，我们获得了约0.24nm的粗糙度。双面介质分布式布拉格反射器可以形成高质量的光学谐振腔，在峰值波长约405nm处，腔模的线宽为1nm，对应的品质因数为405。在150Mbps时，自由空间中出现了眼图开口的高数据传输，这受到检测系统的限制。这些结果表明，在硅上生长的基于氮化镓的RCLED有望在未来成为可见光通信的低成本发射器。
