Yang Shuai, Xu Huan, Long Hao, Ying Leiying, Luo Ronghuang, Zhong Mengjie, Lu Wenrui, Hou Xiang, Mei Yang, Zhang Baoping
Opt Lett. 2022 Jun 1;47(11):2858-2861. doi: 10.1364/OL.458088.
In this Letter, GaN-based green resonant-cavity light-emitting diodes (RCLEDs) with a low-cost aluminum (Al) metal bottom mirror, a dielectric top mirror, and a copper (Cu) supporting plate were fabricated. The green-emitting epitaxial wafer was grown on a patterned sapphire substrate (PSS) to ensure high crystal quality (CQ). Laser lift-off (LLO) of the PSS and electrical plating of a Cu supporting plate were then carried out to realize the vertical device structure. The emission wavelength and full width at half maximum (FWHM) of the main emission peak of the device are ∼518 nm and 14 nm, respectively. Under the current density of 50 A/cm, a relatively high light output power (LOP) of 11.1 mW can be obtained from the green RCLED. Moreover, when the current injection is 20 mA (8 A/cm), the corresponding forward bias voltage is as low as ∼2.46 V. The reasons for the low operating voltage and high LOP can be attributed to the improvement of CQ, the release of residual compressive stress of the GaN-based epilayer due to the removal of PSS, and better heat dissipation properties of the Cu supporting plate.
在本信函中，制备了具有低成本铝（Al）金属底部反射镜、介质顶部反射镜和铜（Cu）支撑板的基于氮化镓（GaN）的绿色共振腔发光二极管（RCLED）。在图案化蓝宝石衬底（PSS）上生长绿色发光外延片以确保高晶体质量（CQ）。然后进行PSS的激光剥离（LLO）和Cu支撑板的电镀以实现垂直器件结构。该器件主发射峰的发射波长和半高宽（FWHM）分别约为518 nm和14 nm。在50 A/cm的电流密度下，从绿色RCLED可获得相对较高的光输出功率（LOP），为11.1 mW。此外，当电流注入为20 mA（8 A/cm）时，相应的正向偏置电压低至约2.46 V。低工作电压和高LOP的原因可归因于CQ的提高、由于去除PSS而释放的基于GaN的外延层的残余压应力以及Cu支撑板更好的散热性能。
