用于制备量子点发光二极管的具有改进空穴注入能力的溶液法制备的光滑硫氰酸铜层
Solution-Processed Smooth Copper Thiocyanate Layer with Improved Hole Injection Ability for the Fabrication of Quantum Dot Light-Emitting Diodes.
作者信息
Wen Ming-Ru, Yang Sheng-Hsiung, Chen Wei-Sheng
机构信息
Institute of Lighting and Energy Photonics, College of Photonics, National Yang Ming Chiao Tung University, Tainan 71150, Taiwan.
Opulence Optronics Co., Ltd., Hsinchu 30091, Taiwan.
出版信息
Nanomaterials (Basel). 2022 Jan 1;12(1):154. doi: 10.3390/nano12010154.
Copper thiocyanate (CuSCN) has been gradually utilized as the hole injection layer (HIL) within optoelectronic devices, owing to its high transparency in the visible range, moderate hole mobility, and desirable environmental stability. In this research, we demonstrate quantum dot light-emitting diodes (QLEDs) with high brightness and current efficiency by doping 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) in CuSCN as the HIL. The experimental results indicated a smoother surface of CuSCN upon F4TCNQ doping. The augmentation in hole mobility of CuSCN and carrier injection to reach balanced charge transport in QLEDs were confirmed. A maximum brightness of 169,230 cd m and a current efficiency of 35.1 cd A from the optimized device were received by adding 0.02 wt% of F4TCNQ in CuSCN, revealing promising use in light-emitting applications.
硫氰酸铜（CuSCN）由于其在可见光范围内的高透明度、适度的空穴迁移率和良好的环境稳定性，已逐渐被用作光电器件中的空穴注入层（HIL）。在本研究中，我们通过在作为HIL的CuSCN中掺杂2,3,5,6-四氟-7,7,8,8-四氰基喹啉二甲烷（F4TCNQ），展示了具有高亮度和电流效率的量子点发光二极管（QLED）。实验结果表明，掺杂F4TCNQ后CuSCN的表面更光滑。证实了CuSCN空穴迁移率的提高以及载流子注入，以实现QLED中平衡的电荷传输。通过在CuSCN中添加0.02 wt%的F4TCNQ，优化后的器件获得了169230 cd m的最大亮度和35.1 cd A的电流效率，显示出在发光应用中的广阔前景。
Zotero 插件