Chiu Pei-Chieh, Yang Sheng-Hsiung
Institute of Lighting and Energy Photonics, College of Photonics, National Chiao Tung University No. 301, Gaofa 3rd Road, Guiren District Tainan City 71150 Taiwan Republic of China
Nanoscale Adv. 2019 Nov 21;2(1):401-407. doi: 10.1039/c9na00618d. eCollection 2020 Jan 22.
In this research, we demonstrate a novel approach to improve the device performance of quantum dot light emitting diodes (QLEDs) by blending an additive BYK-P105 with poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) as the hole transport layer. In addition, for the first time, polyethylenimine ethoxylated (PEIE)-modified zinc oxide nanoparticles (ZnO NPs) as the electron transport layer were applied in regular-type QLEDs for achieving high device efficiency. A very high brightness of 139 909 cd m and current efficiency of 27.2 cd A were obtained for the optimized device with the configuration of ITO/PEDOT:PSS + BYK-P105/PVK/CdSe QDs/ZnO NPs/PEIE/LiF/Al that shows promising use in light-emitting applications.
在本研究中，我们展示了一种新颖的方法来提高量子点发光二极管（QLED）的器件性能，即将添加剂BYK-P105与聚（3,4-乙撑二氧噻吩）：聚苯乙烯磺酸盐（PEDOT:PSS）混合作为空穴传输层。此外，首次将聚乙撑亚胺乙氧基化（PEIE）修饰的氧化锌纳米颗粒（ZnO NPs）作为电子传输层应用于常规型QLED中，以实现高器件效率。对于具有ITO/PEDOT:PSS + BYK-P105/PVK/CdSe QDs/ZnO NPs/PEIE/LiF/Al结构的优化器件，获得了139909 cd m的非常高的亮度和27.2 cd A的电流效率，这表明其在发光应用中具有广阔的应用前景。
Zotero 插件
