Xie Ying-Ming, Zhang Cheng-Ping, Hu Jin-Xin, Mak Kin Fai, Law K T
Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, 999077 Hong Kong, China.
School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA.
Phys Rev Lett. 2022 Jan 14;128(2):026402. doi: 10.1103/PhysRevLett.128.026402.
Moiré heterobilayer transition metal dichalcogenides (TMDs) emerge as an ideal system for simulating the single-band Hubbard model and interesting correlated phases have been observed in these systems. Nevertheless, the moiré bands in heterobilayer TMDs were believed to be topologically trivial. Recently, it was reported that both a quantum valley Hall insulating state at filling ν=2 (two holes per moiré unit cell) and a valley-polarized quantum anomalous Hall state at filling ν=1 were observed in AB stacked moiré MoTe_{2}/WSe_{2} heterobilayers. However, how the topologically nontrivial states emerge is not known. In this Letter, we propose that the pseudomagnetic fields induced by lattice relaxation in moiré MoTe_{2}/WSe_{2} heterobilayers could naturally give rise to moiré bands with finite Chern numbers. We show that a time-reversal invariant quantum valley Hall insulator is formed at full filling ν=2, when two moiré bands with opposite Chern numbers are filled. At half filling ν=1, the Coulomb interaction lifts the valley degeneracy and results in a valley-polarized quantum anomalous Hall state, as observed in the experiment. Our theory identifies a new way to achieve topologically nontrivial states in heterobilayer TMD materials.
莫尔异质双层过渡金属硫族化合物(TMDs)成为模拟单带哈伯德模型的理想体系,并且在这些体系中已经观察到了有趣的关联相。然而,异质双层TMDs中的莫尔能带被认为是拓扑平凡的。最近,有报道称在AB堆叠的莫尔MoTe₂/WSe₂异质双层中观察到了填充因子ν = 2(每个莫尔单胞有两个空穴)时的量子谷霍尔绝缘态以及填充因子ν = 1时的谷极化量子反常霍尔态。然而,拓扑非平凡态是如何出现的尚不清楚。在本信函中,我们提出莫尔MoTe₂/WSe₂异质双层中晶格弛豫诱导的赝磁场能够自然地产生具有有限陈数的莫尔能带。我们表明,当填充具有相反陈数的两个莫尔能带时,在完全填充ν = 2时形成了一个时间反演不变的量子谷霍尔绝缘体。在半填充ν = 1时,库仑相互作用消除了谷简并性,并导致了如实验中所观察到的谷极化量子反常霍尔态。我们的理论确定了一种在异质双层TMD材料中实现拓扑非平凡态的新方法。