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采用铟镓锌氧化物薄膜晶体管的中子平板探测器。

Neutron flat-panel detector using In-Ga-Zn-O thin-film transistor.

作者信息

Fujiwara Takeshi, Miyoshi Hiroaki, Mitsuya Yuki, Yamada Norifumi L, Wakabayashi Yasuo, Otake Yoshie, Hino Masahiro, Kino Koichi, Tanaka Masahito, Oshima Nagayasu, Takahashi Hiroyuki

机构信息

National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan.

InXite, Inc., Tsukba, Ibaraki 305-0047, Japan.

出版信息

Rev Sci Instrum. 2022 Jan 1;93(1):013304. doi: 10.1063/5.0066557.

Abstract

Neutron imaging is a powerful tool for observing the internal structure of an object without destroying the object. Neutron imaging (neutron radiography) is a prominent application of neutrons but still requires significant improvements, for example, in sensitivity, resolution, radiation hardness, and handling of neutron imaging detectors. This paper presents the development and the first neutron imaging results of a neutron flat-panel detector (nFPD) based on an In-Ga-Zn-O (IGZO) thin-film transistor (TFT)/photodiode array coupled with a LiF/ZnS scintillator sheet. Direct photo-coupling to the scintillator increases the light collection efficiency. Moreover, unlike lens-coupled neutron cameras, the proposed detector is compact and easy to handle. Owing to the high off-state resistance of IGZO TFTs, their leakage current is lower than that of conventional TFTs, enabling the IGZO TFTs to hold an accumulated charge for a longer period of time and allowing longer exposure times for imaging. This would be a powerful feature for imaging at compact neutron sources with limited flux. This paper reports on the first neutron imaging results with an IGZO nFPD, its performance evaluation, and a demonstration of three-dimensional computed tomography with neutrons.

摘要

中子成像技术是一种在不破坏物体的情况下观察其内部结构的强大工具。中子成像(中子射线照相术)是中子的一项重要应用,但仍需要在灵敏度、分辨率、辐射硬度以及中子成像探测器的处理等方面进行显著改进。本文介绍了一种基于铟镓锌氧化物(IGZO)薄膜晶体管(TFT)/光电二极管阵列与LiF/ZnS闪烁体片耦合的中子平板探测器(nFPD)的研发情况及其首次中子成像结果。与闪烁体的直接光耦合提高了光收集效率。此外,与透镜耦合的中子相机不同,所提出的探测器结构紧凑且易于操作。由于IGZO TFT具有高的关态电阻,其漏电流低于传统TFT,这使得IGZO TFT能够更长时间地保持累积电荷,并允许更长的成像曝光时间。对于在通量有限的紧凑型中子源处进行成像而言,这将是一项强大的功能。本文报道了使用IGZO nFPD的首次中子成像结果、其性能评估以及中子三维计算机断层扫描的演示。

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