Xue Lian, Sun Hao, Wu Qiang, Yao Weifeng
Shanghai Key Laboratory of Materials Protection and Advanced Materials in Electric Power, Shanghai University of Electric Power, Shanghai, PR China.
Shanghai Key Laboratory of Materials Protection and Advanced Materials in Electric Power, Shanghai University of Electric Power, Shanghai, PR China.
J Colloid Interface Sci. 2022 Jun;615:87-94. doi: 10.1016/j.jcis.2022.01.107. Epub 2022 Jan 19.
Melon-based carbon nitride (CN) is a semiconductor photocatalyst with a conduction band position suitable for photocatalytic HO production. However, the thermodynamic inability to adsorb O molecules greatly limits its photocatalytic efficiency for HO production. In this paper, P-doped CN with good performance for HO production was synthesized by a simple one-step calcination method. The experimental results show that when the doping amount of P is about 9.0 wt% of CN, the yield of HO can reach 12990 μM/h/g, which is about 6.6 times as that of pure CN. The mechanism of HO production over P-CN was firstly revealed by using the density functional theory calculations based on the melon crystal structure of carbon nitride. The results show that P-doping is easier to the strong thermodynamic adsorption of O on CN, which is more beneficial to the formation of intermediate products. Further experimental results show that the substitution of C in CN by P-doping suppresses the electron and hole recombination, and therefore promoting the photocatalytic performance of P-doped CN.
基于瓜环的氮化碳(CN)是一种半导体光催化剂,其导带位置适合光催化产生羟基自由基(HO)。然而,其在热力学上无法吸附氧分子,这极大地限制了其光催化产生HO的效率。本文通过一种简单的一步煅烧法合成了对HO产生具有良好性能的P掺杂CN。实验结果表明,当P的掺杂量约为CN的9.0 wt%时,HO的产率可达12990 μM/h/g,约为纯CN的6.6倍。基于氮化碳的瓜环晶体结构,利用密度泛函理论计算首次揭示了P-CN上产生HO的机理。结果表明,P掺杂更容易使氧在CN上发生强烈的热力学吸附,这更有利于中间产物的形成。进一步的实验结果表明,P掺杂取代CN中的碳抑制了电子和空穴的复合,从而提高了P掺杂CN的光催化性能。