Xu Wenjing, Yang Hengquan, Liu Chengyan, Zhang Zhongwei, Chen Chunguang, Ye Zhenyuan, Lu Zhao, Wang Xiaoyang, Gao Jie, Chen Junliang, Xie Zhengchuan, Miao Lei
Guangxi Key Laboratory of Information Material, Guangxi Collaborative Innovation Center of Structure and Property for New Energy and Materials, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, P. R. China.
School of Physics and Electronic & Electrical Engineering, and Jiangsu Key Laboratory of Modern Measurement Technology and Intelligent Systems, Huaiyin Normal University, Huai'an 223300, P. R. China.
ACS Appl Mater Interfaces. 2021 Jul 21;13(28):32876-32885. doi: 10.1021/acsami.1c04326. Epub 2021 Jul 9.
As a lead-free thermoelectric material, SnTe is inhibited by its inherent high carrier concentration and high thermal conductivity. This work describes the synergistic effect on the modulation of band structure and microstructural defects of SnTe by Ag and Y codoping, which gives rise to band convergence and multiple microstructural defects (secondary phases, dislocations, and boundaries) in the matrix and endows SnAgYTe with an increased power factor of ∼2485 μW m K, an extremely low lattice thermal conductivity of ∼0.61 W m K, and a peak as high as ∼1.2 at 873 K. This work reveals that the combination of Ag and Y could play a role in the synergistic optimization of electronic and phonon transport properties of SnTe by modifying the band structure and microstructures, providing guidance for enhancing the thermoelectric performance of the relevant materials.
作为一种无铅热电材料，SnTe受到其固有的高载流子浓度和高导热率的限制。这项工作描述了Ag和Y共掺杂对SnTe能带结构调制和微观结构缺陷的协同作用，这导致了基体中的能带收敛和多种微观结构缺陷（第二相、位错和晶界），并赋予SnAgYTe约2485 μW m K的增加功率因子、约0.61 W m K的极低晶格热导率以及在873 K时高达约1.2的峰值ZT。这项工作表明，Ag和Y的组合可以通过改变能带结构和微观结构，在SnTe的电子和声子输运性质的协同优化中发挥作用，为提高相关材料的热电性能提供指导。
