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发光金属有机框架中的本征空穴迁移率及其在有机发光二极管中的应用

Intrinsic Hole Mobility in Luminescent Metal-Organic Frameworks and Its Application in Organic Light-Emitting Diodes.

作者信息

Kaiyasuan Chokchai, Somjit Vetiga, Boekfa Bundet, Packwood Daniel, Chasing Pongsakorn, Sudyoadsuk Taweesak, Kongpatpanich Kanokwan, Promarak Vinich

机构信息

Department of Materials Science and Engineering, School of Molecular Science and Engineering, Vidyasirimedhi Institute of Science and Technology, Rayong, 21210, Thailand.

Department of Chemistry, Faculty of Liberal Arts and Science, Kasetsart University, Kamphaeng Saen Campus, Nakhonpathom, 73140, Thailand.

出版信息

Angew Chem Int Ed Engl. 2022 Apr 25;61(18):e202117608. doi: 10.1002/anie.202117608. Epub 2022 Mar 7.

DOI:10.1002/anie.202117608
PMID:35139250
Abstract

Most metal-organic frameworks (MOFs) lack charge mobility, which is crucial for realizing their use in optoelectronic applications. This work proposes the design of a MOF using triarylamine-based ligands (Zr-NBP) as the lone pair electron spacer to enhance the hole mobility in the MOF while maintaining its luminescent properties. Zr-NBP has strong fluorescence with a good hole mobility of 1.05×10  cm  V  s , which is comparable to organic materials used in optoelectronic devices. We also employed a Zr-NBP nanofilm in the pure phase as both a non-doped emissive layer and a hole-transporting layer within organic light-emitting diodes (OLEDs). The obtained OLED device produced a bright green light with a low turn-on voltage of 3.9 V. This work presents an advance in developing the electronic properties of MOFs by modifying the chemical properties of its building blocks, and will likely inspire further design of MOF materials as active layers in optoelectronic devices.

摘要

大多数金属有机框架材料(MOF)缺乏电荷迁移率,而电荷迁移率对于实现其在光电子应用中的用途至关重要。这项工作提出了一种使用基于三芳基胺的配体(Zr-NBP)作为孤对电子间隔基来设计MOF的方法,以提高MOF中的空穴迁移率,同时保持其发光特性。Zr-NBP具有很强的荧光,空穴迁移率良好,为1.05×10  cm  V  s ,这与光电器件中使用的有机材料相当。我们还在纯相中使用Zr-NBP纳米膜作为有机发光二极管(OLED)中的非掺杂发光层和空穴传输层。所获得的OLED器件发出亮绿色光,开启电压低至3.9 V。这项工作通过改变MOF结构单元的化学性质在开发其电子特性方面取得了进展,并可能会激发进一步设计MOF材料作为光电器件中的活性层。

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