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氦离子辐照下MoSe薄膜热电性能的调控

Tuning of Thermoelectric Properties of MoSe Thin Films Under Helium Ion Irradiation.

作者信息

Kim Hyuk Jin, Van Quang Nguyen, Nguyen Thi Huong, Kim Sera, Lee Yangjin, Lee In Hak, Cho Sunglae, Seong Maeng-Je, Kim Kwanpyo, Chang Young Jun

机构信息

Department of Physics, University of Seoul, 163 Siripdaero, Dongdaemun-gu, Bldg 14-217, Seoul, 02504, Republic of Korea.

Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan, 44610, Republic of Korea.

出版信息

Nanoscale Res Lett. 2022 Feb 10;17(1):26. doi: 10.1186/s11671-022-03665-9.

DOI:10.1186/s11671-022-03665-9
PMID:35142901
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8831667/
Abstract

Transition metal dichalcogenides have attracted renewed interest for use as thermoelectric materials owing to their tunable bandgap, moderate Seebeck coefficient, and low thermal conductivity. However, their thermoelectric parameters such as Seebeck coefficient, electrical conductivity, and thermal conductivity are interdependent, which is a drawback. Therefore, it is necessary to find a way to adjust one of these parameters without affecting the other parameters. In this study, we investigated the effect of helium ion irradiation on MoSe thin films with the objective of controlling the Seebeck coefficient and electrical conductivity. At the optimal irradiation dose of 10 cm, we observed multiple enhancements of the power factor resulting from an increase in the electrical conductivity, with slight suppression of the Seebeck coefficient. Raman spectroscopy, X-ray diffraction, and transmission electron microscopy analyses revealed that irradiation-induced selenium vacancies played an important role in changing the thermoelectric properties of MoSe thin films. These results suggest that helium ion irradiation is a promising method to significantly improve the thermoelectric properties of two-dimensional transition metal dichalcogenides. Effect of He irradiation on thermoelectric properties of MoSe thin films.

摘要

过渡金属二硫属化物因其可调节的带隙、适中的塞贝克系数和低导热率而重新引起了人们对用作热电材料的兴趣。然而,它们的热电参数,如塞贝克系数、电导率和导热率是相互依存的,这是一个缺点。因此,有必要找到一种方法来调节这些参数中的一个而不影响其他参数。在本研究中,我们研究了氦离子辐照对MoSe薄膜的影响,目的是控制塞贝克系数和电导率。在10厘米的最佳辐照剂量下,我们观察到由于电导率增加导致功率因数多次提高,同时塞贝克系数略有抑制。拉曼光谱、X射线衍射和透射电子显微镜分析表明,辐照诱导的硒空位在改变MoSe薄膜的热电性能方面起着重要作用。这些结果表明,氦离子辐照是一种显著改善二维过渡金属二硫属化物热电性能的有前途的方法。氦辐照对MoSe薄膜热电性能的影响。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/20af/8831667/9047d2b94b99/11671_2022_3665_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/20af/8831667/8c8762a994ea/11671_2022_3665_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/20af/8831667/26888cded574/11671_2022_3665_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/20af/8831667/fe922478f9e5/11671_2022_3665_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/20af/8831667/9047d2b94b99/11671_2022_3665_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/20af/8831667/8c8762a994ea/11671_2022_3665_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/20af/8831667/26888cded574/11671_2022_3665_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/20af/8831667/fe922478f9e5/11671_2022_3665_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/20af/8831667/9047d2b94b99/11671_2022_3665_Fig4_HTML.jpg

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