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重离子辐照对In(TeSe)薄膜热电性能的影响。

Effects of Heavy Ion Irradiation on the Thermoelectric Properties of In(TeSe) Thin Films.

作者信息

Pandian Mannu, Krishnaprasanth Alageshwaramoorthy, Palanisamy Matheswaran, Bangaru Gokul, Meena Ramcharan, Dong Chung-Li, Kandasami Asokan

机构信息

Department of Physics, Tamkang University, New Taipei City 25137, Taiwan.

Department of Physics, Kongunadu Arts and Science College, Coimbatore 641029, India.

出版信息

Nanomaterials (Basel). 2022 Oct 27;12(21):3782. doi: 10.3390/nano12213782.

DOI:10.3390/nano12213782
PMID:36364558
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9653846/
Abstract

Ion irradiation is an exceptionally effective approach to induce controlled surface modification/defects in semiconducting thin films. In this investigation, ion-irradiated Se-Te-based compounds exhibit electrical transport properties that greatly favor the transformation of waste heat into electricity. Enhancements of both the Seebeck coefficient (S) and the power factor (PF) of In(TeSe) films under 120 MeV Ni ion irradiation were examined. The maximum S value of the pristine film was about ~221 µVK. A significantly higher S value of about ~427 µVK was obtained following irradiation at 1 × 10 ions/cm. The observed S values suggest the n-type conductivity of these films, in agreement with Hall measurements. Additionally, Ni ion irradiation increased the PF from ~1.23 to 4.91 µW/Km, demonstrating that the irradiated films outperformed the pristine samples. This enhancement in the TE performance of the In(TeSe) system is elucidated by irradiation-induced effects that are revealed by structural and morphological studies.

摘要

离子辐照是在半导体薄膜中诱导可控表面改性/缺陷的一种极其有效的方法。在本研究中，离子辐照的硒 - 碲基化合物表现出的电输运特性极大地有利于将废热转化为电能。研究了120 MeV镍离子辐照下In(TeSe)薄膜的塞贝克系数(S)和功率因数(PF)的增强情况。原始薄膜的最大S值约为221 μVK。在1×10离子/cm的辐照后，获得了约427 μVK的显著更高的S值。观察到的S值表明这些薄膜具有n型导电性，这与霍尔测量结果一致。此外，镍离子辐照使PF从~1.23增加到4.91 μW/Km，表明辐照后的薄膜性能优于原始样品。In(TeSe)体系的这种热电性能增强是由结构和形态学研究揭示的辐照诱导效应所阐明的。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ca03/9653846/f6ce89ac6a00/nanomaterials-12-03782-g008a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ca03/9653846/124f8bb27cad/nanomaterials-12-03782-g001.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ca03/9653846/4d6ea761626e/nanomaterials-12-03782-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ca03/9653846/5849b1589416/nanomaterials-12-03782-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ca03/9653846/a898d7c570a9/nanomaterials-12-03782-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ca03/9653846/f6ce89ac6a00/nanomaterials-12-03782-g008a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ca03/9653846/124f8bb27cad/nanomaterials-12-03782-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ca03/9653846/8cb4d9d5f9de/nanomaterials-12-03782-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ca03/9653846/9a2262b24313/nanomaterials-12-03782-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ca03/9653846/6fd586c7f534/nanomaterials-12-03782-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ca03/9653846/4d6ea761626e/nanomaterials-12-03782-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ca03/9653846/5849b1589416/nanomaterials-12-03782-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ca03/9653846/a898d7c570a9/nanomaterials-12-03782-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ca03/9653846/f6ce89ac6a00/nanomaterials-12-03782-g008a.jpg

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