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M'MCO二维MXenes Janus结构的电子结构与磁性能调控的理论研究

Theoretical Study on the Electronic Structure and Magnetic Properties Regulation of Janus Structure of M'MCO 2D MXenes.

作者信息

Gao Panpan, Song Minhui, Wang Xiaoxu, Liu Qing, He Shizhen, Su Ye, Qian Ping

机构信息

Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China.

School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China.

出版信息

Nanomaterials (Basel). 2022 Feb 6;12(3):556. doi: 10.3390/nano12030556.

Abstract

Motivated by the recent successful synthesis of Janus monolayer of transition metal (TM) dichalcogenides, MXenes with Janus structures are worthy of further study, concerning its electronic structure and magnetic properties. Here, we study the effect of different transition metal atoms on the structure stability and magnetic and electronic properties of M'MCO (M' and M = V, Cr and Mn). The result shows the output magnetic moment is contributed mainly by the d orbitals of the V, Cr, and Mn atoms. The total magnetic moments of ferromagnetic (FM) configuration and antiferromagnetic (AFM) configuration are affected by coupling types. FM has a large magnetic moment output, while the total magnetic moments of AFM2's (intralayer AFM/interlayer FM) configuration and AFM3's (interlayer AFM/intralayer AFM) configuration are close to 0. The band gap widths of VCrCO, VMnCO, CrMnCO, VCO, and CrCO are no more than 0.02 eV, showing metallic properties, while MnCO is a semiconductor with a 0.7071 eV band gap width. Janus MXenes can regulate the size of band gap, magnetic ground state, and output net magnetic moment. This work achieves the control of the magnetic properties of the available 2D materials, and provides theoretical guidance for the extensive design of novel Janus MXene materials.

摘要

受近期过渡金属(TM)二硫属化物Janus单层成功合成的启发,具有Janus结构的MXenes因其电子结构和磁性值得进一步研究。在此,我们研究了不同过渡金属原子对M'MCO(M'和M = V、Cr和Mn)结构稳定性、磁性和电子性质的影响。结果表明,输出磁矩主要由V、Cr和Mn原子的d轨道贡献。铁磁(FM)构型和反铁磁(AFM)构型的总磁矩受耦合类型影响。FM有较大的磁矩输出,而AFM2(层内AFM/层间FM)构型和AFM3(层间AFM/层内AFM)构型的总磁矩接近0。VCrCO、VMnCO、CrMnCO、VCO和CrCO的带隙宽度不超过0.02 eV,表现出金属特性,而MnCO是带隙宽度为0.7071 eV的半导体。Janus MXenes可以调节带隙大小、磁基态和输出净磁矩。这项工作实现了对现有二维材料磁性的控制,并为新型Janus MXene材料的广泛设计提供了理论指导。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2f00/8838217/c86e4c97113e/nanomaterials-12-00556-g001.jpg

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