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种植体扫描体磨损对全牙弓数字化印模准确性的影响:一项随机体外试验

Influence of Implant Scanbody Wear on the Accuracy of Digital Impression for Complete-Arch: A Randomized In Vitro Trial.

作者信息

Arcuri Lorenzo, Lio Fabrizio, Campana Veronica, Mazzetti Vincenzo, Federici Francesca Romana, Nardi Alessandra, Galli Massimo

机构信息

Materials for Health, Environment and Energy, University of Rome Tor Vergata, 00133 Rome, Italy.

Independent Researcher, 20121 Milan, Italy.

出版信息

Materials (Basel). 2022 Jan 25;15(3):927. doi: 10.3390/ma15030927.

Abstract

The aim of this study was to evaluate the influence of implant scanbody (ISB) wear on the accuracy of digital impression for complete-arch. A polymethylmethacrylate (PMMA) edentulous mandibular model with four internal hexagonal interlocking conical connections was scanned with an extraoral optical scanner to achieve a reference file. Four cylindrical polyetheretherketone (PEEK) ISBs were scanned 30 times with IOS, and the test files were aligned to the reference file with a best-fit algorithm. For each analog linear (ΔX, ΔY and ΔZ-axis) and angular deviations (ΔANGLE) were assessed. Euclidean distance (ΔEUC) was calculated from the linear deviation, reporting a mean of 82 µm (SD 61) ranging from 8 to 347 µm. ΔANGLE error mean was 0.33° (SD 0.20), ranging from 0.02 to 0.92°. From a multivariate analysis, when ΔEUC was considered as a response variable, a significant influence of ISB wear by scan number in interaction to position for implant 3.6 was identified ( < 0.0001); when ΔANGLE was considered as a response variable, a significant effect of position 3.6 was recorded (( < 0.0001). The obtained results showed that the ISB wear negatively influenced the accuracy of IOS, suggesting that ISB base wear could be detrimental for the seating of ISBs on angulated implants.

摘要

本研究的目的是评估种植体扫描体(ISB)磨损对全牙弓数字印模准确性的影响。使用口外光学扫描仪对具有四个内部六角形互锁锥形连接的聚甲基丙烯酸甲酯(PMMA)无牙下颌模型进行扫描,以获得参考文件。用口腔内扫描仪(IOS)对四个圆柱形聚醚醚酮(PEEK)ISB进行30次扫描,并使用最佳拟合算法将测试文件与参考文件对齐。评估每个模拟的线性偏差(ΔX、ΔY和ΔZ轴)和角度偏差(ΔANGLE)。根据线性偏差计算欧几里得距离(ΔEUC),其平均值为82µm(标准差61),范围为8至347µm。ΔANGLE误差平均值为0.33°(标准差0.20),范围为0.02至0.92°。多变量分析显示,当将ΔEUC视为响应变量时,发现ISB磨损次数与种植体3.6位置之间的相互作用对其有显著影响(<0.0001);当将ΔANGLE视为响应变量时,记录到位置3.6有显著影响(<0.0001)。所得结果表明,ISB磨损对IOS的准确性有负面影响,这表明ISB基座磨损可能不利于ISB在成角度种植体上的就位。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1111/8838002/9e1e80283467/materials-15-00927-g001.jpg

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