IEEE Trans Ultrason Ferroelectr Freq Control. 2022 Nov;69(11):3117-3125. doi: 10.1109/TUFFC.2022.3152010. Epub 2022 Nov 2.
A LiNbO3 (LN)/SiO2/Si multilayered structure was recently reported as a new platform for achieving wideband radio frequency (RF) filters. However, the in-band ripples in filters resulting from the spurious Rayleigh mode lead to deteriorated performance, and thus, a wide Rayleigh elimination window (REW) is highly desired for realizing spurious-free wideband surface acoustic wave (SAW) filters with a wide design space and good process tolerance. Here, we investigated the spurious mode suppression on the LN/SiO2/Si platform theoretically and experimentally through modulating the cut angle ( θ ) of LN. The K dispersion characteristics of the main mode (shear-horizontal wave) and spurious mode (Rayleigh wave) on LN/SiO2/Si substrates were systematically analyzed by the finite-element method (FEM), along with bulk LN for comparison. It is found that the REW is wider on LN/SiO2/Si than bulk LN, as Rayleigh wave can be totally eliminated with Cu electrode normalized thickness ( [Formula: see text]) ranging from 0.1 to 0.19 when θ is between 19° and 22° on the LN/SiO2/Si platform, in contrast to the quite narrow REW on bulk LN restricted to some specific [Formula: see text]. To verify the simulation results, resonators were prepared on 15°YX-LN/SiO2/Si, 20°YX-LN/SiO2/Si, bulk 15°YX-LN, and bulk 20°YX-LN. In addition, the typical spurious-free wideband SAW filter with [Formula: see text] nm based on the 20°YX-LN/SiO2/Si platform demonstrates high performance with a center frequency ( [Formula: see text]) of 1.27 GHz, a minimum insertion loss (ILmin) of 0.7 dB, and a 3-dB fractional bandwidth (FBW) of ~20.1%. This work provides a workable solution in fabricating spurious-free wideband and low-loss SAW filters for fifth-generation (5G) applications.
一种 LiNbO3 (LN)/SiO2/Si 多层结构最近被报道为实现宽带射频 (RF) 滤波器的新平台。然而,由于寄生瑞利模式导致滤波器中的通带纹波,从而导致性能恶化,因此,为了实现具有宽设计空间和良好工艺容差的无杂散宽带体声波 (SAW) 滤波器,非常需要宽瑞利消除窗口 (REW)。在这里,我们通过调制 LN 的切割角 (θ) 从理论和实验上研究了 LN/SiO2/Si 平台上的寄生模式抑制。通过有限元法 (FEM) 系统地分析了 LN/SiO2/Si 衬底上主模式 (剪切水平波) 和寄生模式 (瑞利波) 的 K 色散特性,并与体 LN 进行了比较。结果表明,与体 LN 相比,LN/SiO2/Si 上的 REW 更宽,当 LN/SiO2/Si 平台上的θ在 19°至 22°之间时,Cu 电极归一化厚度 ([Formula: see text]) 范围为 0.1 至 0.19 时,瑞利波可以完全消除,而体 LN 上的 REW 很窄,仅限于某些特定的 [Formula: see text]。为了验证模拟结果,在 15°YX-LN/SiO2/Si、20°YX-LN/SiO2/Si、体 15°YX-LN 和体 20°YX-LN 上制备了谐振器。此外,基于 20°YX-LN/SiO2/Si 平台的典型无杂散宽带 SAW 滤波器具有 1.27 GHz 的中心频率 ([Formula: see text])、0.7 dB 的最小插入损耗 (ILmin) 和 20.1% 的 3-dB 分数带宽 (FBW)。这项工作为制造用于第五代 (5G) 应用的无杂散宽带和低损耗 SAW 滤波器提供了可行的解决方案。