Zhang Dongliang, Zhang Qi, Liang Xiaoya, Pang Xing, Zhao Yulong
State Key Laboratory for Manufacturing Systems Engineering, School of Mechanical Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an 710049, China.
Micromachines (Basel). 2022 Jan 29;13(2):227. doi: 10.3390/mi13020227.
Graphene has been widely used due to its excellent electrical, mechanical and chemical properties. Defects produced during its transfer process will seriously affect the performance of graphene devices. In this paper, single-layer graphene was transferred onto glass and silicon dioxide (SiO) substrates by wet transfer technology, and the square resistances thereof were tested. Due to the different binding forces of the transferred graphene surfaces, there may have been pollutants present. PMMA residues, graphene laminations and other defects that occurred in the wet transfer process were analyzed by X-ray photoelectron spectroscopy and Raman spectroscopy. These defects influenced the square resistance of the produced graphene films, and of these defects, PMMA residue was the most influential; square resistance increased with increasing PMMA residue.
石墨烯因其优异的电学、力学和化学性能而被广泛应用。其转移过程中产生的缺陷会严重影响石墨烯器件的性能。本文通过湿法转移技术将单层石墨烯转移到玻璃和二氧化硅（SiO）衬底上，并测试了其方块电阻。由于转移的石墨烯表面结合力不同，可能存在污染物。采用X射线光电子能谱和拉曼光谱分析了湿法转移过程中出现的聚甲基丙烯酸甲酯（PMMA）残留、石墨烯分层等缺陷。这些缺陷影响了所制备石墨烯薄膜的方块电阻，其中PMMA残留的影响最大；方块电阻随PMMA残留量的增加而增大。
