Lee Youngmin, Lee So Hyun, Son Hyo Seok, Lee Sejoon
Quantum-Functional Semiconductor Research Center, Dongguk University-Seoul, Seoul 04620, Korea.
Department of Semiconductor Science, Dongguk University-Seoul, Seoul 04620, Korea.
Nanomaterials (Basel). 2022 Feb 11;12(4):603. doi: 10.3390/nano12040603.
The high-performance room-temperature-operating Si single-electron transistors (SETs) were devised in the form of the multiple quantum-dot (MQD) multiple tunnel junction (MTJ) system. The key device architecture of the Si MQD MTJ system was self-formed along the volumetrically undulated [110] Si nanowire that was fabricated by isotropic wet etching and subsequent oxidation of the e-beam-lithographically patterned [110] Si nanowire. The strong subband modulation in the volumetrically undulated [110] Si nanowire could create both the large quantum level spacings and the high tunnel barriers in the Si MQD MTJ system. Such a device scheme can not only decrease the cotunneling effect, but also reduce the effective electron temperature. These eventually led to the energetic stability for both the Coulomb blockade and the negative differential conductance characteristics at room temperature. The results suggest that the present device scheme (i.e., [110] Si MQD MTJ) holds great promise for the room-temperature demonstration of the high-performance Si SETs.
高性能室温工作的硅单电子晶体管（SET）采用多量子点（MQD）多隧道结（MTJ）系统的形式设计。硅MQD MTJ系统的关键器件结构是沿着通过各向同性湿法蚀刻以及对电子束光刻图案化的[110]硅纳米线进行后续氧化而制造的体积起伏的[110]硅纳米线自形成的。体积起伏的[110]硅纳米线中的强子带调制能够在硅MQD MTJ系统中产生大的量子能级间距和高隧道势垒。这样的器件方案不仅可以降低共隧穿效应，还能降低有效电子温度。这些最终导致了室温下库仑阻塞和负微分电导特性的能量稳定性。结果表明，当前的器件方案（即[110]硅MQD MTJ）在室温下展示高性能硅SET方面具有很大的潜力。
