Liu Qing, Zhao Jing, Guo Jinlong, Wu Ruqun, Liu Wenjing, Chen Yiqin, Du Guanghua, Duan Huigao
National Engineering Research Center for High Efficiency Grinding, State-Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, China.
Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China.
Nano Lett. 2021 Mar 24;21(6):2390-2396. doi: 10.1021/acs.nanolett.0c04304. Epub 2021 Mar 8.
In this work, we demonstrate a process having the capability to realize single-digit nanometer lithography using single heavy ions. By adopting 2.15 GeV Kr ions as the exposure source and hydrogen silsesquioxane (HSQ) as a negative-tone inorganic resist, ultrahigh-aspect-ratio nanofilaments with sub-5 nm feature size, following the trajectory of single heavy ions, were reliably obtained. Control experiments and simulation analysis indicate that the high-resolution capabilities of both HSQ resist and the heavy ions contribute the sub-5 nm fabrication result. Our work on the one hand provides a robust evidence that single heavy ions have the potential for single-digit nanometer lithography and on the other hand proves the capability of inorganic resists for reliable sub-5 nm patterning. Along with the further development of heavy-ion technology, their ultimate patterning resolution is supposed to be more accessible for device prototyping and resist evaluation at the single-digit nanometer scale.
在这项工作中，我们展示了一种能够使用单个重离子实现个位数纳米光刻的工艺。通过采用2.15 GeV的氪离子作为曝光源，并使用氢倍半硅氧烷（HSQ）作为负性无机抗蚀剂，沿着单个重离子的轨迹，可靠地获得了特征尺寸小于5纳米的超高纵横比纳米丝。对照实验和模拟分析表明，HSQ抗蚀剂和重离子的高分辨率能力促成了小于5纳米的制造结果。我们的工作一方面提供了有力证据，证明单个重离子具有实现个位数纳米光刻的潜力，另一方面证明了无机抗蚀剂用于可靠的小于5纳米图案化的能力。随着重离子技术的进一步发展，它们的最终图案化分辨率应该更易于在个位数纳米尺度上进行器件原型制作和抗蚀剂评估。
