Zhao Jingtao, Chen Quanyou, Chen Zhidong, Chen Chaoyang, Zhao Zhenguo, Liu Zhong, Zhao Gang
Science and Technology On High Power Microwave Laboratory, Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang, 621900, China.
Key Laboratory of Science and Technology On Complex Electromagnetic Environment, China Academy of Engineering Physics, Mianyang, 621900, China.
Sci Rep. 2022 Feb 25;12(1):3230. doi: 10.1038/s41598-022-07326-w.
Positive-intrinsic-negative (PIN) limiters are widely used to protect sensitive components from leakage power itself and adjacent high-power injection. Being the core of a PIN limiter, the PIN diode is possible to be burnt out by the external microwave pulses. Here, using a parallel computing program for semiconductor multi-physics effects designed by ourselves, we studied the influence of the thickness of the I layer and the anode diameter of the PIN diode on the maximum temperature change curve of the PIN diode limiter. The damage threshold criterion in the numerical simulation was first studied by comparing experimental results with simulation results. Then, we determined the impact of the structure on the thermal burnout effect induced by microwave pulses of PIN limiter diodes.
正-本征-负（PIN）限幅器被广泛用于保护敏感元件免受自身泄漏功率和相邻高功率注入的影响。作为PIN限幅器的核心，PIN二极管可能会被外部微波脉冲烧毁。在此，我们使用自行设计的用于半导体多物理效应的并行计算程序，研究了PIN二极管的I层厚度和阳极直径对PIN二极管限幅器最大温度变化曲线的影响。通过将实验结果与模拟结果进行比较，首次研究了数值模拟中的损伤阈值标准。然后，我们确定了结构对PIN限幅器二极管微波脉冲引起的热烧毁效应的影响。
