Zhao Jingtao, Chen Quanyou, Zhao Gang, Chen Chaoyang, Chen Zhidong
Science and Technology on High Power Microwave Laboratory, Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang, 621900, China.
Key Laboratory of Science and Technology on Complex Electromagnetic Environment, China Academy of Engineering Physics, Mianyang, 621900, China.
Sci Rep. 2020 Feb 3;10(1):1709. doi: 10.1038/s41598-020-58710-3.
Positive-intrinsic-negative (PIN) diodes are widely used as limiters to protect sensitive components from damage in radio frequency (RF) receiver systems and communication front-ends. However, PIN diode limiters can be burnt out due to the microwave pulses coupling through the front-end of RF receiver systems. The damage processes and mechanisms in PIN limiters are undoubtedly important topics. Here, the damage accumulation process in PIN limiters induced by external microwave pulses is studied via the injection experiments. The relationship between the degree of damage (i.e., insertion loss) in the limiters and number of the injected pulses is reported. The maximum temperature criterion for burnout in PIN limiters is theoretically predicted and experimentally verified not accurate, and it is further observed that the insertion loss of the PIN diode limiter changes significantly only if more energy is injected into the limiter via microwave pulses.
正-本征-负（PIN）二极管被广泛用作限幅器，以保护敏感组件在射频（RF）接收系统和通信前端中免受损坏。然而，PIN二极管限幅器可能会因微波脉冲通过RF接收系统前端耦合而被烧毁。PIN限幅器中的损伤过程和机制无疑是重要的课题。在此，通过注入实验研究了外部微波脉冲引起的PIN限幅器中的损伤累积过程。报道了限幅器中的损伤程度（即插入损耗）与注入脉冲数量之间的关系。从理论上预测并通过实验验证了PIN限幅器烧毁的最高温度准则并不准确，并且进一步观察到，只有当通过微波脉冲向限幅器注入更多能量时，PIN二极管限幅器的插入损耗才会发生显著变化。
