Mpofu Pamburayi, Rouf Polla, O'Brien Nathan J, Forsberg Urban, Pedersen Henrik
Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden.
Dalton Trans. 2022 Mar 22;51(12):4712-4719. doi: 10.1039/d1dt03748j.
Indium oxide (InO) is an important transparent conducting material widely used in optoelectronic applications. Herein, we study the deposition of InO by thermal atomic layer deposition (ALD) using our recently reported indium(III) triazenide precursor and HO. A temperature interval with self-limiting growth was found between ∼270 and 385 °C with a growth per cycle of ∼1.0 Å. The deposited films were polycrystalline cubic InO with In : O ratios of 1 : 1.2, and low levels of C and no detectable N impurities. The transmittance of the films was found to be >70% in visible light and the resistivity was found to be 0.2 mΩ cm. The high growth rates, low impurities, high optical transmittance, and low resistivity of these films give promise to this process being used for ALD of InO films for future microelectronic displays.
氧化铟（InO）是一种重要的透明导电材料，广泛应用于光电子领域。在此，我们使用我们最近报道的三氮烯铟（III）前驱体和HO，通过热原子层沉积（ALD）研究了InO的沉积。在约270至385°C之间发现了一个具有自限性生长的温度区间，每个循环的生长约为1.0 Å。沉积的薄膜为多晶立方InO，In : O比为1 : 1.2，C含量低且未检测到N杂质。发现薄膜在可见光中的透过率>70%，电阻率为0.2 mΩ·cm。这些薄膜的高生长速率、低杂质、高光学透过率和低电阻率使得该工艺有望用于未来微电子显示器的InO薄膜ALD。
