Department of Materials Science and Engineering, University of Wisconsin-Madison , Madison, Wisconsin 53706, United States.
ACS Appl Mater Interfaces. 2014 Oct 22;6(20):17481-8. doi: 10.1021/am502085c. Epub 2014 Oct 7.
Highly conductive indium oxide films, electrically more conductive than commercial sputtered indium tin oxide films films, were deposited using a new liquid precursor Et2InN(SiMe3)2 and H2O by atomic layer deposition (ALD) at 225-250 °C. Film resistivity can be as low as 2.3 × 10(-4)-5.16 × 10(-5) Ω·cm (when deposited at 225-250 °C). Optical transparency of >80% at wavelengths of 400-700 nm was obtained for all the deposited films. A self-limiting ALD growth mode was found 0.7 Å/cycle at 175-250 °C. X-ray photoelectron spectroscopy depth profile analysis showed pure indium oxide thin film without carbon or any other impurity. The physical and chemical properties were systematically analyzed by transmission electron microscopy, electron energy loss spectroscopy, X-ray diffraction, optical spectrometer, and hall measurement; it was found that the enhanced electrical conductivity is attributed to the oxygen deficient InOx phases.
采用新型液体前驱体 Et2InN(SiMe3)2 和 H2O，通过原子层沉积（ALD）在 225-250°C 下沉积出比商业溅射氧化铟锡（ITO）薄膜导电性能更高的高导电氧化铟薄膜。薄膜电阻率低至 2.3×10(-4)-5.16×10(-5) Ω·cm（沉积温度为 225-250°C 时）。所有沉积的薄膜在 400-700nm 波长下的光学透明度>80%。在 175-250°C 下，发现了具有自限制 ALD 生长模式的 0.7Å/循环。X 射线光电子能谱深度分析表明，薄膜为不含碳或任何其他杂质的纯氧化铟薄膜。通过透射电子显微镜、电子能量损失光谱、X 射线衍射、光谱仪和 Hall 测量对其物理化学性质进行了系统分析；研究发现，增强的导电性归因于氧缺陷的 InOx 相。
